TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

LowNoiseAudioAmplifierApplications •Lownoise :NF=3dB(typ.)RG=100Ω,VCE=−6V,IC=−100μA,f=1kHz :NF=0.5dB(typ.)RG=1kΩ,VCE=−6V,IC=−100μA,f=1kHz •HighDCcurrentgain:hFE=200~700 •Highbreakdownvoltage:VCEO=−120V •Lowpulsenoise.Low1/fn

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

LowNoiseAudioAmplifierApplications •Lownoise :NF=3dB(typ.)RG=100Ω,VCE=−6V,IC=−100μA,f=1kHz :NF=0.5dB(typ.)RG=1kΩ,VCE=−6V,IC=−100μA,f=1kHz •HighDCcurrentgain:hFE=200~700 •Highbreakdownvoltage:VCEO=−120V •Lowpulsenoise.Low1/fn

TRANSISTOR(LOWNOISEAUDIOAMPLIFIERAPPLICATIONS)

LowNoiseAudioAmplifierApplications •Lownoise :NF=3dB(typ.)RG=100Ω,VCE=−6V,IC=−100μA,f=1kHz :NF=0.5dB(typ.)RG=1kΩ,VCE=−6V,IC=−100μA,f=1kHz •HighDCcurrentgain:hFE=200~700 •Highbreakdownvoltage:VCEO=−120V •Lowpulsenoise.Low1/fn

TOSHIBATRANSISTORSILICONPNPEPITAXIALTYPE(PCTPROCESS)

LOWNOISEAUDIOAMPLIFIERAPPLICATIONS •Lownoise :NF=3dB(typ.)RG=100Ω,VCE=−6V,IC=−100μA,f=1kHz :NF=0.5dB(typ.)RG=1kΩ,VCE=−6V,IC=−100μA,f=1kHz •HighDCcurrentgain:hFE=200~700 •Highbreakdownvoltage:VCEO=−120V •Lowpulsenoise.Low1/fnoi

LowNoiseAudioAmplifierApplications

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LOWNOISEAUDIOAMPLIFIERAPPLICATIONS

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