TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f n

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Low noise : NF = 3dB (typ.) RG= 100 Ω, VCE= −6 V, IC= −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG= 1 kΩ, VCE= −6 V, IC= −100 μA, f = 1 kHz • High DC current gain: hFE= 200~700 • High breakdown voltage: VCEO= −120 V • Low pulse noise. Low 1/f noi

Low Noise Audio Amplifier Applications

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LOW NOISE AUDIO AMPLIFIER APPLICATIONS

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