2SA220晶体管资料

  • 2SA220别名:2SA220三极管、2SA220晶体管、2SA220晶体三极管

  • 2SA220生产厂家:日本三洋公司

  • 2SA220制作材料:Ge-PNP

  • 2SA220性质:调幅 (AM)_前置放大 (V)_混频 (M)

  • 2SA220封装形式:直插封装

  • 2SA220极限工作电压:20V

  • 2SA220最大电流允许值:0.01A

  • 2SA220最大工作频率:60MHZ

  • 2SA220引脚数:3

  • 2SA220最大耗散功率

  • 2SA220放大倍数

  • 2SA220图片代号:C-47

  • 2SA220vtest:20

  • 2SA220htest:60000000

  • 2SA220atest:0.01

  • 2SA220wtest:0

  • 2SA220代换 2SA220用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA104,3AG53B,

2SA220价格

参考价格:¥1.0828

型号:2SA2202-TD-E 品牌:On Semiconductor 备注:这里有2SA220多少钱,2025年最近7天走势,今日出价,今日竞价,2SA220批发/采购报价,2SA220行情走势销售排行榜,2SA220报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.

SANYO

三洋

Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications

Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulators, drive circuit).

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

ONSEMI

安森美半导体

双极晶体管,-100V,-2A,低饱和压,PNP 单 TP/TP-FA

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2SA220产品属性

  • 类型

    描述

  • 型号

    2SA220

  • 制造商

    SANYO

  • 功能描述

    PNP 60V 0.1A 200 to 400 PCP Tape & Reel

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    TRANSISTOR PNP 60V 3A SOT89

更新时间:2025-12-25 11:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
SANYO
2016+
SOT-252
4200
只做原装,假一罚十,公司可开17%增值税发票!
SANYO/三洋
2447
CAN-3
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANYO/三洋
23+
SOT-252
50000
全新原装正品现货,支持订货
ON
24+
TO-220-3 FullPak
25000
ON全系列可订货
ST
专业铁帽
CAN
2000
原装铁帽专营,代理渠道量大可订货
ON/ST
24+
1000
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SANYO
25+
SOT-252
30000
代理全新原装现货,价格优势

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