Silicon PNP Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Feature：Low saturation voltage\nApplication Scope：Mobile equipment power supplies\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -2.5 A \nCollector Current ICP -4 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1 W \nCollector-emitter voltage VCEO -20 V ;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PB-F POWER TRANSISTOR TSM MOQ=30 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个