SILICON PNP EPITAXIAL TYPE

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

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Power transistor for high-speed switching applications

封装/外壳：TO-243AA 包装：卷带（TR） 描述：POWER TRANSISTOR PW-MINI PC=2.5W 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件：163.32 Kbytes Page：5 Pages