TOSHIBA Transistor Silicon PNP Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 25 ns (typ.)

Silicon PNP Epitaxial Type

Features ● High DC current gain: hFE = 200 to 500 (IC = -0.2 A) ● Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) ● High-speed switching: tf = 25 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

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High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件：155.52 Kbytes Page：5 Pages

PNP Transistors

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