TOSHIBA Transistor Silicon PNP Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 25 ns (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon PNP Epitaxial Type

Features ● High DC current gain: hFE = 200 to 500 (IC = -0.2 A) ● Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) ● High-speed switching: tf = 25 ns (typ.)

Power transistor for high-speed switching applications

Feature：Low saturation voltage\nApplication Scope：Mobile equipment power supplies\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -1.5 A \nCollector Current ICP -2.5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 0.75 W \nCollector-emitter voltage VCEO -10 V ;

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

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High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件：155.52 Kbytes Page：5 Pages

PNP Transistors

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