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2SA204晶体管资料
2SA204别名:2SA204三极管、2SA204晶体管、2SA204晶体三极管
2SA204生产厂家:日本日电公司
2SA204制作材料:Ge-PNP
2SA204性质:射频/高频放大 (HF)_开关管 (S)
2SA204封装形式:直插封装
2SA204极限工作电压:30V
2SA204最大电流允许值:0.2A
2SA204最大工作频率:6MHZ
2SA204引脚数:3
2SA204最大耗散功率:0.15W
2SA204放大倍数:
2SA204图片代号:D-9
2SA204vtest:30
2SA204htest:6000000
- 2SA204atest:0.2
2SA204wtest:0.15
2SA204代换 2SA204用什么型号代替:ASY26,ASY27,ASY48,2N1302,3AK32,
2SA204价格
参考价格:¥1.6590
型号:2SA2040-E 品牌:ONSemi 备注:这里有2SA204多少钱,2025年最近7天走势,今日出价,今日竞价,2SA204批发/采购报价,2SA204行情走势销售排行榜,2SA204报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela | ONSEMI 安森美半导体 | |||
High Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver | SANYO 三洋 | |||
isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC5707 APPLICATIONS • DC/DC converter,relay drivers,lamp dri | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash | ISC 无锡固电 | |||
High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver | SANYO 三洋 | |||
High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver | SANYO 三洋 | |||
Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela | ONSEMI 安森美半导体 | |||
High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver | SANYO 三洋 | |||
Silicon PNP Epitaxial Planar Transistor Silicon PNP Epitaxial Planar Transistor Application : Audio and General Purpose | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strobes. | SANYO 三洋 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
DC / DC Converter Applications PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applicat | SANYO 三洋 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
SILICON PNP EPITAXIAL PLANER TYPE Silicon PNP epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. | Panasonic 松下 | |||
MEDIUM POWER TRANSISTOR (-30V,-0.5A) Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 Applications Small signal low frequency amplif | ROHM 罗姆 | |||
Medium power transistor (-30V, -1.0A) Medium power transistor (−30V, −1.0A) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 | ROHM 罗姆 | |||
Medium power transistor (-30V, -1.0A) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K Applications Small signal low freque | ROHM 罗姆 | |||
MEDIUM POWER TRANSISTOR Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A) 2) Low saturation voltage, typically (Typ. : −250mV at IC = −1.0A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 Applications Small signal low frequency amplifi | ROHM 罗姆 | |||
High-Current Switching Applications 文件:509.1 Kbytes Page:10 Pages | SANYO 三洋 | |||
High Current Switching Applications 文件:64.26 Kbytes Page:5 Pages | SANYO 三洋 | |||
High Current Switching Applications 文件:64.26 Kbytes Page:5 Pages | SANYO 三洋 | |||
High-Current Switching Applications 文件:509.1 Kbytes Page:10 Pages | SANYO 三洋 | |||
Bipolar Transistor 文件:436.72 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 8A TP-FA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:436.72 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | ONSEMI 安森美半导体 | |||
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | ONSEMI 安森美半导体 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 20V 1.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic 松下 | |||
High speed switching Transistor | ROHM 罗姆 | |||
Silicon PNP transistor in a SOT-23 Plastic Package 文件:612.11 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 |
2SA204产品属性
- 类型
描述
- 型号
2SA204
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-5 -30V -.2A .15W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
1400 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SANYO/三洋 |
24+ |
NA/ |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
25+ |
TO252 |
32360 |
ON/安森美全新特价2SA2040-TL-E即刻询购立享优惠#长期有货 |
|||
SANYO/三洋 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
24+ |
TO-251(I-PAK) |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
23+ |
TO-251(I-PAK) |
8080 |
正规渠道,只有原装! |
|||
TI |
2450+ |
SMD |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
ON |
25+ |
TO-251 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
SANYO/三洋 |
23+ |
TO-251-252 |
688888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SA204芯片相关品牌
2SA204规格书下载地址
2SA204参数引脚图相关
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2SA204数据表相关新闻
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2020-4-24
DdatasheetPDF页码索引
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