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2SA204晶体管资料

  • 2SA204别名:2SA204三极管、2SA204晶体管、2SA204晶体三极管

  • 2SA204生产厂家:日本日电公司

  • 2SA204制作材料:Ge-PNP

  • 2SA204性质:射频/高频放大 (HF)_开关管 (S)

  • 2SA204封装形式:直插封装

  • 2SA204极限工作电压:30V

  • 2SA204最大电流允许值:0.2A

  • 2SA204最大工作频率:6MHZ

  • 2SA204引脚数:3

  • 2SA204最大耗散功率:0.15W

  • 2SA204放大倍数

  • 2SA204图片代号:D-9

  • 2SA204vtest:30

  • 2SA204htest:6000000

  • 2SA204atest:0.2

  • 2SA204wtest:0.15

  • 2SA204代换 2SA204用什么型号代替:ASY26,ASY27,ASY48,2N1302,3AK32,

2SA204价格

参考价格:¥1.6590

型号:2SA2040-E 品牌:ONSemi 备注:这里有2SA204多少钱,2026年最近7天走势,今日出价,今日竞价,2SA204批发/采购报价,2SA204行情走势销售排行榜,2SA204报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High Current Switching Applications

High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver

SANYO

三洋

Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC5707 APPLICATIONS • DC/DC converter,relay drivers,lamp dri

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

High-Current Switching Applications

High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver

SANYO

三洋

High-Current Switching Applications

High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver

SANYO

三洋

Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rela

ONSEMI

安森美半导体

High-Current Switching Applications

High Current Switching Applications Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor driver

SANYO

三洋

Silicon PNP Epitaxial Planar Transistor

Silicon PNP Epitaxial Planar Transistor Application : Audio and General Purpose

ETCList of Unclassifed Manufacturers

未分类制造商

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strobes.

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -15V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applicat

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -500mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

SILICON PNP EPITAXIAL PLANER TYPE

Silicon PNP epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

PANASONIC

松下

丝印代码:T106;MEDIUM POWER TRANSISTOR (-30V,-0.5A)

Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 Applications Small signal low frequency amplif

ROHM

罗姆

High speed switching Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。

ROHM

罗姆

丝印代码:UL;Medium power transistor (-30V, -1.0A)

Medium power transistor (−30V, −1.0A) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730

ROHM

罗姆

丝印代码:T146;Medium power transistor (-30V, -1.0A)

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K Applications Small signal low freque

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A) 2) Low saturation voltage, typically (Typ. : −250mV at IC = −1.0A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 Applications Small signal low frequency amplifi

ROHM

罗姆

High Current Switching Applications

文件:64.26 Kbytes Page:5 Pages

SANYO

三洋

High-Current Switching Applications

文件:509.1 Kbytes Page:10 Pages

SANYO

三洋

High Current Switching Applications

文件:64.26 Kbytes Page:5 Pages

SANYO

三洋

High-Current Switching Applications

文件:509.1 Kbytes Page:10 Pages

SANYO

三洋

Bipolar Transistor

文件:436.72 Kbytes Page:10 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 8A TP-FA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:436.72 Kbytes Page:10 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 20V 1.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

Silicon PNP transistor in a SOT-23 Plastic Package

文件:612.11 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

2SA204产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    Low VCE(sat)

  • VCE(sat) Max (V):

    0.39

  • IC Cont. (A):

    8

  • VCEO Min (V):

    50

  • VCBO (V):

    100

  • VEBO (V):

    6

  • VBE(sat) (V):

    0.83

  • hFE Min:

    200

  • hFE Max:

    560

  • fT Min (MHz):

    290

  • PTM Max (W):

    1

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-5-16 11:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
25+23+
29901
绝对原装正品全新进口深圳现货
SANYO/三洋
2450+
SOT-252
8850
只做原装正品假一赔十为客户做到零风险!!
SANYO/三洋
23+
TO-252
15885
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
POWER
23+
TO126F
6000
专注配单,只做原装进口现货
Panasonic
最新
SOT-23
35689
原装进口现货库存专业工厂研究所配单供货
SANYO/三洋
23+
TO-252
50000
全新原装正品现货,支持订货
SANYO
24+
TO-252
11400
新进库存/原装
PANASONIC/松下
22+
SOT-23
20000
只做原装

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