Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

Bipolar Transistor

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封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 50V 5A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon PNP Power Transistor

DESCRIPTION ·Large current capacitance ·High-speed switching ·100 avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC5706 ·Minimum Lot-to-Lot variations for robust device performance a

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel

High Current Switching Applications

High Current Switching Applications Features • Adoption of FBET, MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers,

High Current Switching Applications

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High-Current Switching Applications

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