Power Amplifier Applications Driver Stage Amplifier Applications

POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.

Silicon PNP Power Transistor

DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171 APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High fT, complementary pair with 2SC5171. Applications General power and driver stage amplifier applications.

Complementary to 2SC5171

DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -180V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):-1.0V(Max) @IC= -1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

Silicon PNP transistor in a TO-251 Plastic Package.

Descriptions Silicon PNP transistor in a TO-251 Plastic Package. Features High fT, complementary pair with 2SC5171I. Applications General power and driver stage amplifier applications.

Silicon PNP transistor in a TO-126 Plastic Package.

Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features High fT, complementary pair with 2SC5171S. Applications General power and driver stage amplifier applications.

High-Current Switching Applications

High-Current Switching Applications • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC4881

complementary to 2sc5174

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT= 70 MHz (typ.) • Complementary to 2SC5174

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175

High-Current Switching Applications DC-DC Converter Applications

High-Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −3 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC5176

High-Voltage Switching Applications

High-Voltage Switching Applications • High voltage: VCEO = −600 V

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @lc= -5A • Good Linearity of MFE • Complement to Type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage applications

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA Transistor Silicon NPN Triple Diffused Type

Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage

Power Amplifier Applications

Power Amplifier Applications • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage.

TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS

Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NIS

音频功放晶体管

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 180V 2A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 180V 2A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistor

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

文件：237.01 Kbytes Page：4 Pages