PNP Silicon Epitaxial Planar Transistor

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功率三极管

PNP小信号三极管

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= -50V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -0.4V(Max) @IC=-500mA

Medium Power Transistor (-50V, -1A)

Features 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/IB=−500mA/−50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053

Medium power transistor

Features ● Low saturation voltage, typically VCE(sat) = -0.15V at IC / IB = -500mA / -50mA ● PC=2W (on 40X40X0.7mm ceramic board)