Medium Power Transistor (-50V, -1A)

Features 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/IB=−500mA/−50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= -50V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -0.4V(Max) @IC=-500mA

Medium power transistor

Features ● Low saturation voltage, typically VCE(sat) = -0.15V at IC / IB = -500mA / -50mA ● PC=2W (on 40X40X0.7mm ceramic board)

TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

High-Current Switching Applications. • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5076

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) Application : Audio and General Purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) • Good Linearity of hFE • Complement to Type 2SC5099 APPLICATIONS • Designed for audio and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Complement to type 2SC5099 APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5100 APPLICATIONS ·Audio and general purpose

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CE0 = 120V(Min) • Good Linearity of hF£ • Complement to Type 2SC5100 APPLICATIONS • Designed for audio and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5100 APPLICATIONS ·Audio and general purpose

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5100 APPLICATIONS ·Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5101 APPLICATIONS ·Audio and general purpose

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SC5101 Application : Audio and General Purpose

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5101 APPLICATIONS ·Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5101 APPLICATIONS ·Audio and general purpose

Silicon PNP Power Transistor

DESCRIPTION •Collector-Emitter Breakdown Voltage V(BR)CEo=-140V(Min) •Good Linearity of HFE •Complement to Type 2SC5101 APPLICATIONS •Designed for audio and general purpose applications

High-voltage switching Transister

Features 1)High breekdowm voltage. 2)Low Vce 3)Fast switching 4)Wide SOA

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA)

Silicon PNP Transistor

Features • High Voltage: VCBO=-400V • Low Saturation Voltage: VCE(sat)=-1V(Max.) IC=-100mA,IB=-10mA

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High breakdown voltage: VCEO= −400 V • Low saturation voltage: VCE (sat)= −1 V (max) (IC= −100 mA, IB= −10 mA) • Collector metal (fin) is fully covered with mold resin.

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO = - 400 V(Min) ·Complement to the PNP 2SC3425 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-voltage Switching Applications • High breakdown voltage: VCEO = −400 V

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A)

Power Amplifier Applications Driver Stage Amplifier Applications

POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -180V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):-1.0V(Max) @IC= -1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

Complementary to 2SC5171

DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171 APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High fT, complementary pair with 2SC5171. Applications General power and driver stage amplifier applications.

Silicon PNP transistor in a TO-251 Plastic Package.

Descriptions Silicon PNP transistor in a TO-251 Plastic Package. Features High fT, complementary pair with 2SC5171I. Applications General power and driver stage amplifier applications.

Silicon PNP transistor in a TO-126 Plastic Package.

Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features High fT, complementary pair with 2SC5171S. Applications General power and driver stage amplifier applications.

High-Current Switching Applications

High-Current Switching Applications • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC4881

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

complementary to 2sc5174

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT= 70 MHz (typ.) • Complementary to 2SC5174

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175

High-Current Switching Applications DC-DC Converter Applications

High-Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −3 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC5176

High-Voltage Switching Applications

High-Voltage Switching Applications • High voltage: VCEO = −600 V

Power Amplifier Applications

Power Amplifier Applications • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA Transistor Silicon NPN Triple Diffused Type

Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @lc= -5A • Good Linearity of MFE • Complement to Type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio requency amplifier output stage

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @lc= -6A • Good Linearity of hFE • Complement to Type 2SC5197 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power Amplifier Applications4

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications