2SA181晶体管资料

  • 2SA181别名:2SA181三极管、2SA181晶体管、2SA181晶体三极管

  • 2SA181生产厂家:日本三洋公司

  • 2SA181制作材料:Ge-PNP

  • 2SA181性质:射频/高频放大 (HF)_中频放大 (ZF)

  • 2SA181封装形式:直插封装

  • 2SA181极限工作电压:15V

  • 2SA181最大电流允许值:0.01A

  • 2SA181最大工作频率:5MHZ

  • 2SA181引脚数:3

  • 2SA181最大耗散功率

  • 2SA181放大倍数

  • 2SA181图片代号:C-47

  • 2SA181vtest:15

  • 2SA181htest:5000000

  • 2SA181atest:0.01

  • 2SA181wtest:0

  • 2SA181代换 2SA181用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,2SA203,3AG53A,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Epitaxial

Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

HitachiHitachi Semiconductor

日立日立公司

TRANSISTOR (LOW FREQUENCY, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS

LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hFE Linearity : hFE(2)=35(Min.), (VCE= -2V, IC= -300mA) • Complementary to 2SC4707

TOSHIBA

东芝

High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

ROHM

罗姆

High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

ROHM

罗姆

PNP Transistors

■ Features ● High breakdown voltage, BVCEO=-400V. ● High switching speed, typically tf :1us at IC =-100mA. ●High-voltage Switching Transistor

KEXIN

科信电子

PNP Epitaxial Planar Silicon Transistors

Features ● Very small-sized package. ● Adoption of FBET process. ● High DC current gain (hFE=500 to 1200). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.3V). ● High VEBO (VEBO ≥ 15V).

KEXIN

科信电子

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications?

Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer. • Adoption of FBET process. • High DC current gain (hFE=500 to 1200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).

SANYO

三洋

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications???

Features · Very small-sized package permitting 2SA1814-applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V). · High VEBO(VEBO≥15V).

SANYO

三洋

FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications???

PNP Epitaxial Planar Silicon Transistors Features • High power gain : PG=25dB (f=100MHz). • High cutoff frequency ; fT=750MHz typ. • Low collector-to-emitter saturation voltage. • Complementary pair with the 2SC4432.

SANYO

三洋

Silicon PNP epitaxial planer type

Features ● High collector to emitter voltage VCEO.

Panasonic

松下

TRANSISTOR SILICON PNP EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS

TOSHIBA

东芝

High voltage Transistor

ROHM

罗姆

High-voltage Switching Transistor ( 400V, 0.5A)

文件:31.81 Kbytes Page:1 Pages

ROHM

罗姆

High-voltage Switching Transistor ( 400V, 0.5A)

文件:31.81 Kbytes Page:1 Pages

ROHM

罗姆

PNP Transistors

文件:1.16429 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.14259 Mbytes Page:3 Pages

KEXIN

科信电子

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT) 描述:TRANS PNP 400V 0.5A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications

ONSEMI

安森美半导体

PNP Transistors

文件:1.06583 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Epitaxial Planar Silicon Transistors

文件:36.14 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:1.07575 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.02846 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.14634 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.07575 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.14634 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.02846 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.07575 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.14634 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.02846 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.07575 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.14634 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.02846 Mbytes Page:3 Pages

KEXIN

科信电子

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件:88.13 Kbytes Page:2 Pages

ROHM

罗姆

TRANSISTORS TO 92L TO-92LS MRT

文件:195.39 Kbytes Page:2 Pages

ROHM

罗姆

TRANSISTORS TO 92L TO-92LS MRT

文件:195.39 Kbytes Page:2 Pages

ROHM

罗姆

2SA181产品属性

  • 类型

    描述

  • 型号

    2SA181

  • 功能描述

    两极晶体管 - BJT PNP 400V 0.5A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-25 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
22+
SOT89
100000
代理渠道/只做原装/可含税
SANYO
24+
SOT-323
60000
原装现货假一罚十
ROHM
07PB
SOT89
1350
全新原装进口自己库存优势
ROHM/罗姆
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
23+
SOT89
20000
全新原装假一赔十
ROHM/罗姆
20+
SOT-89
43000
原装优势主营型号-可开原型号增税票
ROHM
24+
SOT-89
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ROHM
24+/25+
900
原装正品现货库存价优
SANYO/三洋
2450+
TO-92L
9850
只做原厂原装正品现货或订货假一赔十!
ROHM
23+
SOT-89
24500
原厂原装正品

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