2SA179晶体管资料

  • 2SA1790别名:2SA1790三极管、2SA1790晶体管、2SA1790晶体三极管

  • 2SA1790生产厂家:日本松下公司

  • 2SA1790制作材料:Si-PNP

  • 2SA1790性质:表面帖装型 (SMD)_低噪放大 (ra)

  • 2SA1790封装形式:贴片封装

  • 2SA1790极限工作电压:30V

  • 2SA1790最大电流允许值:0.03A

  • 2SA1790最大工作频率:>150MHZ

  • 2SA1790引脚数:3

  • 2SA1790最大耗散功率

  • 2SA1790放大倍数

  • 2SA1790图片代号:H-15

  • 2SA1790vtest:30

  • 2SA1790htest:150000100

  • 2SA1790atest:0.03

  • 2SA1790wtest:0

  • 2SA1790代换 2SA1790用什么型号代替:2SA1791,2SA1821,

2SA179价格

参考价格:¥1.0166

型号:2SA1790GCL 品牌:Panasonic 备注:这里有2SA179多少钱,2025年最近7天走势,今日出价,今日竞价,2SA179批发/采购报价,2SA179行情走势销售排行榜,2SA179报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanartype Forlow-frequencyamplification Complementaryto2SC4626 ■Features •HightransitionfrequencyfT •SS-Minitypepackageallowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

Forhigh-frequencyamplification

SiliconPNPepitaxialplanartype Forhigh-frequencyamplification Complementaryto2SC4626J ■Features •OptimumforRFamplificationofFM/AMradios •HightransitionfrequencyfT •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanertype Forhigh-frequencyamplification Complementaryto2SC4656 ■Features ●HightransitionfrequencyfT. ●SmallcollectoroutputcapacitanceCob. ●SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandt

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SwitchingPowerTransistor(-5APNP)

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

SwitchingPowerTransistor(-7APNP)

SwitchingPowerTransistor

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新电元工业株式会社

SHINDENGEN

PowerTransistor(-50V,-3A)

PowerTransistor(-50V,-2A) LowFrequencyTransistor(50V,2A)

ROHMRohm

罗姆罗姆半导体集团

ROHM

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PowerTransistor(-50V,-3A)

Features 1)Lowsaturationvoltage.VCE(sat)=-0.35V(Max.)atIC/IB=-1A/-50mA. 2)ExcellentDCcurrentgaincharacteristics. 4)Complementsthe2SA1797.

SUNTAC

Suntac Electronic Corp.

SUNTAC

PowerTransistor

Features ●Lowsaturationvoltage.VCE(sat)=-0.35V(Max.)atIC/IB=-1A/-50mA. ●ExcellentDCcurrentgaincharacteristics. ●Complementsthe2SA1797and2SC4672.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPGeneralPurposeTransistor

FEATURES Hightransitionfrequency Highpowerdissipation

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PowerTransistor(??0V,??A)

Features 1)Lowsaturationvoltage. VCE(sat)=−0.35V(Max.)atIC/IB=−1A/50mA. 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SC4672.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Lowsaturationvoltage,excellentDCcurrentgaincharacteristics, complementsthe2SC4672. Applications Poweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

Plastic-EncapsulateTransistors

FEATURES •Lowsaturationvoltage •ExcellentDCcurrentgaincharacteristics •Complementsto2SC4672

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Lowsaturationvoltage ●ExcellentDCcurrentgaincharacteristics ●Complementsto2SC4672

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●LowsaturationvoltageVCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A). ●ExcellentDCcurrentgaincharacteristics. ●Complementsthe2SA1797and2SC4672. ●MSL3 APPLICATIONS ●Lowfrequencytransistor.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

Lowsaturationvoltage

FEATURES •Lowsaturationvoltage •ExcellentDCcurrentgaincharacteristics •Complementsto2SC4672

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份(香港)有限公司

MAKOSEMI

SOT-89Plastic-EncapsulateTransistors

FEATURES Lowsaturationvoltage ExcellentDCcurrentgaincharacteristics

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

WILLAS

PNPSiliconEpitaxialPlanarTransistor

FEATURES LowsaturationvoltageVCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A). ExcellentDCcurrentgaincharacteristics. Complementsthe2SA1797and2SC4672. APPLICATIONS Lowfrequencytransistor.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

Plastic-EncapsulateTransistors

FEATURES Lowsaturationvoltage ExcellentDCcurrentgaincharacteristics Complementsto2SC4672U

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

Plastic-EncapsulateTransistors

FEATURES Lowsaturationvoltage ExcellentDCcurrentgaincharacteristics Complementsto2SC4672U

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

Plastic-EncapsulateTransistors

FEATURES Lowsaturationvoltage ExcellentDCcurrentgaincharacteristics Complementsto2SC4672U

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

PowerTransistor(??0V,??A)

Features 1)Lowsaturationvoltage. VCE(sat)=−0.35V(Max.)atIC/IB=−1A/50mA. 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SC4672.

ROHMRohm

罗姆罗姆半导体集团

ROHM

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

POWERTRANSISTOR FEATURES *LowSaturationVoltage. VCE(SAT)=-0.35V(Max)atIC/IB=-1A/-50mA *ExcellentDCCurrentGainCharacteristics

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

Plastic-EncapsulateTransistors

FEATURES Lowsaturationvoltage ExcellentDCcurrentgaincharacteristics Complementsto2SC4672U

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

20V/8ASwitchingApplications

20V/8ASwitchingApplications Features •AdoptionofMBITprocesses. •Lowsaturationvoltage. •Fastswitchingspeed. •Largecurrentcapacity.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

封装/外壳:SC-89,SOT-490 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 20V 0.03A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

Panasonic Electronic Components

PanasonicElectronicComponents

封装/外壳:SC-89,SOT-490 包装:管件 描述:TRANS PNP 50V 0.05A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

Panasonic Electronic Components

PanasonicElectronicComponents

PNPSiliconEpitaxialPlanarTransistor

文件:270.19 Kbytes Page:5 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

PowerTransistor-50V,-3A

文件:171.34 Kbytes Page:3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

文件:235.58 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PowerTransistor(−50V,−3A)

文件:97.71 Kbytes Page:3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PNPTransistors

文件:1.00427 Mbytes Page:3 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

GeneralPurposeTransistor

文件:235.58 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PowerTransistor(−50V,−3A)

文件:97.71 Kbytes Page:3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

GeneralPurposeTransistor

文件:235.58 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PNPTransistors

文件:1.11988 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconEpitaxialPlanarTransistor

文件:270.19 Kbytes Page:5 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:186.58 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERTRANSISTOR

文件:169.02 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SA179产品属性

  • 类型

    描述

  • 型号

    2SA179

  • 功能描述

    TRANS PNP 20VCEO 30MA SSMINI-3

  • RoHS

  • 类别

    分离式半导体产品 >> RF 晶体管(BJT)

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 17/Dec/2010

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电压 -

  • 集电极发射极击穿(最大)

    4.7V 频率 -

  • 转换

    47GHz

  • 噪声系数(dB典型值@频率)

    0.5dB ~ 1.45dB @ 150MHz ~ 10GHz

  • 增益

    9dB ~ 31dB 功率 -

  • 最大

    160mW 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    160 @ 25mA,3V 电流 -

  • 集电极(Ic)(最大)

    45mA

  • 安装类型

    表面贴装

  • 封装/外壳

    4-SMD,扁平引线

  • 供应商设备封装

    4-TSFP

  • 包装

    Digi-Reel®

  • 其它名称

    BFP 740FESD E6327DKR

更新时间:2025-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASON/松下
24+
NA/
3976
原装现货,当天可交货,原型号开票
PANASONIC
2016+
SOT323
15000
只做原装,假一罚十,公司可开17%增值税发票!
PANASONIC
23+
SOT23
20000
全新原装假一赔十
PANASONIC/松下
25+
SOT323
54648
百分百原装现货 实单必成 欢迎询价
PANASONIC/松下
24+
SOT323
990000
明嘉莱只做原装正品现货
PANASONIC/松下
1950+
SOT-523
4856
只做原装正品现货!或订货假一赔十!
PANASONIC/松下
25+
SOT23
15620
PANASONIC/松下全新特价2SA1791GRL即刻询购立享优惠#长期有货
PANASONIC/松下
02+
SOT-523
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
Panasonic
25+23+
Sot-423
34715
绝对原装正品全新进口深圳现货

2SA179芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

2SA179数据表相关新闻