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2SA175晶体管资料
2SA175别名：2SA175三极管、2SA175晶体管、2SA175晶体三极管
2SA175生产厂家：日本东芝公司
2SA175制作材料：Ge-PNP
2SA175性质：射频/高频放大 （HF）
2SA175封装形式：直插封装
2SA175极限工作电压：18V
2SA175最大电流允许值：0.005A
2SA175最大工作频率：85MHZ
2SA175引脚数：3
2SA175最大耗散功率：
2SA175放大倍数：
2SA175图片代号：D-58
2SA175vtest：18
2SA175htest：85000000
- 2SA175atest：0.005
2SA175wtest：0
2SA175代换 2SA175用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG53C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Low-Frequency General-Purpose Amp Applications? Low-Frequency General-Purpose Amp Applications Features • Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage. | SANYO 三洋 |   | ||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·For switching applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage-: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·For switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications | SAVANTIC | | ||
isc Silicon PNP Power Transistor DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications | JMNIC 锦美电子 | | ||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
High-Voltage Switching Transistor(Camera strobes and Telephone, Power supply) (Camera strobes and Telephone, Power supply) (−400V, −0.1A) Features 1) High breakdown voltage. (BVCEO = −400V) 2) Lowsaturation voltage, typically VCE(sat)= −0.2V at IC/ IB = −20mA/ −2mA. 3) High switching speed, typicallytf=1µs at Ic =100mA. 4) Wide SOA(safe operating area). 5) Complemen | ROHM 罗姆 | | ||
High-Voltage Switching Transistor Features ● High breakdown voltage ● Low saturation voltage ● High switching speed | KEXIN 科信电子 | | ||
Silicon PNP Power Transistor 文件：133.41 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP transistor in a TO-220F Plastic Package. 文件：746.14 Kbytes Page：5 Pages | FOSHAN 蓝箭电子 | | ||
双极晶体管 | FOSHAN 蓝箭电子 | | ||
Silicon PNP Power Transistors 文件：161.62 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：161.62 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：165.89 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistor 文件：127.89 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：165.89 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
30 Watt Silicon PNP Mesa Power Transistor 文件：381.93 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
30 Watt Silicon PNP Mesa Power Transistor | THINKISEMI 思祁半导体 | | ||
High voltage Transistor | ROHM 罗姆 | | ||
High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A) 文件：72.63 Kbytes Page：4 Pages | ROHM 罗姆 | | ||
High-Coltage Switching Transistor 文件：49.24 Kbytes Page：1 Pages | ROHM 罗姆 | | ||
High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A) 文件：72.63 Kbytes Page：4 Pages | ROHM 罗姆 | | ||
High-Coltage Switching Transistor 文件：49.24 Kbytes Page：1 Pages | ROHM 罗姆 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT） 描述：TRANS PNP 400V 0.1A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ROHM 罗姆 | |
2SA175产品属性
- 类型
描述
- 型号
2SA175
- 功能描述
两极晶体管 - BJT PNP 400V 0.1A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ROHM/罗姆 |
23+ |
SOT89 |
122893 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ROHM/罗姆 |
24+ |
NA/ |
7034 |
原装现货,当天可交货,原型号开票 |
|||
Rohm |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ROHM/罗姆 |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
ROHM/罗姆 |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
ROHM |
24+ |
原廠封裝 |
6980 |
原装现货,可开13%税票 |
|||
ROHM/罗姆 |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
ROHM |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
ROHM/罗姆 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
2SA175芯片相关品牌
2SA175规格书下载地址
2SA175参数引脚图相关
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2SA175数据表相关新闻
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DdatasheetPDF页码索引
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