Low-Frequency General-Purpose Amp Applications?

Low-Frequency General-Purpose Amp Applications Features • Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage.

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage-: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·For switching applications

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·For switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications

isc Silicon PNP Power Transistor

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：AHP；High-Voltage Switching Transistor(Camera strobes and Telephone, Power supply)

(Camera strobes and Telephone, Power supply) (−400V, −0.1A) Features 1) High breakdown voltage. (BVCEO = −400V) 2) Lowsaturation voltage, typically VCE(sat)= −0.2V at IC/ IB = −20mA/ −2mA. 3) High switching speed, typicallytf=1µs at Ic =100mA. 4) Wide SOA(safe operating area). 5) Complemen

High-Voltage Switching Transistor

Features ● High breakdown voltage ● Low saturation voltage ● High switching speed

High voltage Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。 •耐高圧表面安装型三极管;

双极晶体管

Silicon PNP Power Transistor

文件：133.41 Kbytes Page：2 Pages

Silicon PNP transistor in a TO-220F Plastic Package.

文件：746.14 Kbytes Page：5 Pages

Silicon PNP Power Transistors

文件：161.62 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：161.62 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：165.89 Kbytes Page：3 Pages

Silicon PNP Power Transistor

文件：127.89 Kbytes Page：2 Pages

Silicon PNP Power Transistors

文件：165.89 Kbytes Page：3 Pages

30 Watt Silicon PNP Mesa Power Transistor

30 Watt Silicon PNP Mesa Power Transistor

文件：381.93 Kbytes Page：2 Pages

丝印代码：AHP；High-Coltage Switching Transistor

文件：49.24 Kbytes Page：1 Pages

丝印代码：AHP；High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A)

文件：72.63 Kbytes Page：4 Pages

High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A)

文件：72.63 Kbytes Page：4 Pages

High-Coltage Switching Transistor

文件：49.24 Kbytes Page：1 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT） 描述：TRANS PNP 400V 0.1A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个