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2SA173晶体管资料

2SA173别名：2SA173三极管、2SA173晶体管、2SA173晶体三极管
2SA173生产厂家：日本日电公司
2SA173制作材料：Ge-PNP
2SA173性质：射频/高频放大（HF）_开关管（S）
2SA173封装形式：直插封装
2SA173极限工作电压：20V
2SA173最大电流允许值：0.05A
2SA173最大工作频率：4MHZ
2SA173引脚数：3
2SA173最大耗散功率：0.125W
2SA173放大倍数：
2SA173图片代号：D-9
2SA173vtest：20
2SA173htest：4000000
2SA173atest：0.05
2SA173wtest：0.125

2SA173代换 2SA173用什么型号代替：ASY26,ASY27,ASY48,2N1306,3AG55A,

型号	功能描述	生产厂家企业	LOGO
2SA1730	High-Speed Switching Applications High-Speed Switching Applications Features · Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.	SANYO 三洋	SANYO
2SA1730	PNP Epitaxial Planar Silicon Features • Adoption of FBET , MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Small-sized package.	KEXIN 科信电子	KEXIN
2SA1731	High-Speed Switching Applications High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Fast switching speed.	SANYO 三洋	SANYO
2SA1731	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1731	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1731-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1731-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1732	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1732	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1732	High-Speed Switching Applications High-Speed Switching Applications Features • Adoption of FBET processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Fast switching speed.	SANYO 三洋	SANYO
2SA1732-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1732-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SA1734	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4539	TOSHIBA 东芝	TOSHIBA
2SA1734	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1734	Silicon PNP Epitaxial Features ● Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA). ● High speed switching time: tstg = 0.2ìs (typ.). ● Small flat package. ● PC = 1.0 to 2.0 W (mounted on ceramic substrate).	KEXIN 科信电子	KEXIN
2SA1735	Power Switching Applications Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) ● High Speed Switching Time: tstg = 0.25ìs(typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC4540	KEXIN 科信电子	KEXIN
2SA1735	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4540	TOSHIBA 东芝	TOSHIBA
2SA1736	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC= 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4541	TOSHIBA 东芝	TOSHIBA
2SA1736	Power Switching Applications Features ● Low Saturation Voltage: VCE(sat)= -0.5V (max) (IC= -1.5A) ● High Speed Switching Time: tstg= 0.2ìs(typ.) ● Small Flat Package ● PC= 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC4541	KEXIN 科信电子	KEXIN
2SA1738	Silicon PNP epitaxial planer type For high speed switching ■ Features • High speed switching (Pair with 2SC3757) • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	Panasonic 松下	Panasonic
2SA1738	Silicon PNP Epitaxial Planar Type Silicon PNP Epitaxial Planar Type Features High-speed switch Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	KEXIN 科信电子	KEXIN
2SA1739	Silicon PNP epitaxial planer type Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 ■ Features • High speed switching • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing	Panasonic 松下	Panasonic
2SA1739	Silicon PNP Epitaxial Planar Type Features ● High speed switching. ● Low collector-emitter saturation voltage VCE(sat).	KEXIN 科信电子	KEXIN
2SA1730_15	PNP Transistors 文件：1.0831 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1730-Q	PNP Transistors 文件：1.0831 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1730-R	PNP Transistors 文件：1.0831 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1730-S	PNP Transistors 文件：1.0831 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1731	PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SA1732	PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SA1734	Power transistor for high-speed switching applications	TOSHIBA 东芝	TOSHIBA
2SA1734	Power Amplifier Applications Power Switching Applications 文件：167.16 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1734_07	Power Amplifier Applications Power Switching Applications 文件：167.16 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1734_15	PNP Transistors 文件：968.95 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1735	Power Amplifier Applications Power Switching Applications 文件：179.44 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1735	Power Amplifier Applications Power Switching Applications 文件：148.36 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1735_07	Power Amplifier Applications Power Switching Applications 文件：148.36 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1735_09	Power Amplifier Applications Power Switching Applications 文件：179.44 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1735_15	PNP Transistors 文件：992.97 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1736	Power Amplifier Applications Power Switching Applications 文件：167.22 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1736	Power Amplifier Applications Power Switching Applications 文件：198.44 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1736_07	Power Amplifier Applications Power Switching Applications 文件：167.22 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1736_09	Power Amplifier Applications Power Switching Applications 文件：198.44 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1736_15	PNP Transistors 文件：1.23355 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA17380RL	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）描述：TRANS PNP 15V 0.05A MINI3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Panasonic 松下	Panasonic
2SA17390RL	封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 15V 0.05A SMINI3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Panasonic 松下	Panasonic

2SA173产品属性

类型
描述
型号
2SA173
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SA173供应商更多...

更新时间：2025-11-1 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SA1739	Panasonic(松下)	24+	SMD	31768	免费送样,账期支持,原厂直供,没有中间商赚差价	询价
深圳市得捷芯城科技有限公司	2SA1739GQL	PANASON/松下	24+	NA/	18250	原装现货,当天可交货,原型号开票	询价
深圳市佳鑫美电子科技有限公司	2SA1740	SANYO	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
贸泽芯城（深圳）电子科技有限公司	2SA174	ST/MOTO	23+	CAN to-39	8637	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市振宏微科技有限公司	2SA1739	SOT-323	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	2SA1740	长电	25+23+	SOT-89	24259	绝对原装正品全新进口深圳现货	询价
深圳市毅创腾电子科技有限公司	2SA1739	PANASONIC	23+	SOT-323	7510	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市一线半导体有限公司	2SA1739	Panasonic/松下	24+	SOT-323	6200	新进库存/原装	询价
深圳市赛特兴科技有限公司	2SA174	ST	23+	CAN to-39	16900	正规渠道,只有原装!	询价
深圳市宇创芯科技有限公司	2SA1739-Q(TX)	PANASONIC/松下	24+	SOT-323	9600	原装现货,优势供应,支持实单!	询价

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2SA173晶体管资料

2SA173产品属性

2SA173供应商更多...

2SA173芯片相关品牌

2SA173规格书下载地址

2SA173参数引脚图相关

2SA173数据表相关新闻

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2SA1037AKT146Q

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