2SA170晶体管资料

  • 2SA170别名:2SA170三极管、2SA170晶体管、2SA170晶体三极管

  • 2SA170生产厂家:日本日电公司

  • 2SA170制作材料:Ge-PNP

  • 2SA170性质:射频/高频放大 (HF)_开关管 (S)

  • 2SA170封装形式:直插封装

  • 2SA170极限工作电压:20V

  • 2SA170最大电流允许值:0.05A

  • 2SA170最大工作频率:15MHZ

  • 2SA170引脚数:3

  • 2SA170最大耗散功率:0.175W

  • 2SA170放大倍数

  • 2SA170图片代号:D-9

  • 2SA170vtest:20

  • 2SA170htest:15000000

  • 2SA170atest:0.05

  • 2SA170wtest:0.175

  • 2SA170代换 2SA170用什么型号代替:ASY26,ASY27,ASY48,3AG87A,

2SA170价格

参考价格:¥0.8004

型号:2SA1705S-AN 品牌:ON 备注:这里有2SA170多少钱,2025年最近7天走势,今日出价,今日竞价,2SA170批发/采购报价,2SA170行情走势销售排行榜,2SA170报价。
型号 功能描述 生产厂家&企业 LOGO 操作

High-VoltageDriverApplications

High-VoltageDriverApplications Features •Highbreakdownvoltage. •AdoptionofMBITprocess. •ExcellenthFElinearity.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

HIGHVOLTAGEDRIVERAPPLICATION

HIGHVOLTAGEDRIVERAPPLICATION ■FEATURES *Highbreakdownvoltage. *ExcellenthFElinearity.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-200mA Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-200mA Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity Applications Highvoltagedriverapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighBreakdownVoltage ●AdoptionofMBITProcess ●ExcellenthFELinearity

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

iscSiliconPNPPowerTransistor

DESCRIPTION •Highbreakdownvoltage •LowCollector-EmitterSaturationVoltage •HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Forhighvoltagedriverapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPEpitaxialPlanarSiliconTransistor

FEATURES ●Highbreakdownvoltage. ●AdoptionofMBITprocess. ●ExcellenthFElinearity.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SiliconPNPPowerTransistor

DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Low-FrequencyGeneral-PurposeAmpApplications????

Low-FrequencyGeneral-PurposeAmplifierApplications Features •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. Applications •AFpoweramplifier,medium-speedswitching,small-sizedmotordriverapplications.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Lowsaturationvotlage. •Largecurrentcapacity. •Fastswitchingspeed.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Low-FrequencyAmp,ElectronicGovernorApplications??????

Low-FrequencyAmplifier,ElectronicGovernorApplications Features •Lowcollector-to-emittersaturationvoltage.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentDriverApplications?

High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentDriverApplications

High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentDriverApplications

High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentDriverApplications

High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentDriverApplications

High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Low-FrequencyPowerAmpApplications

Low-FrequencyPowerAmplifierApplications Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistorAdoptionofFBETprocess

Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBETprocess

Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBETprocess

Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBET,MBITprocesses

Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistorAdoptionofFBET,MBITprocesses

Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBET,MBITprocesses

Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Lowcollector-to-emittersaturationvoltage •Largecurrentcapacity,wideASO •Fastswitchingspeed

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-VoltageSwitchingApplications

PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP

Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBET,MBITprocesses

Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP

Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBET,MBITprocesses

Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP

Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorAdoptionofFBET,MBITprocesses

Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorHighbreakdownvoltage,largecurrentcapacity

BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-VoltageSwitchingApplications

High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistorHighbreakdownvoltage,largecurrentcapacity

BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistorHighbreakdownvoltage,largecurrentcapacity

BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HIGHVOLTAGEDRIVERAPPLICATION

文件:162.17 Kbytes Page:3 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEDRIVERAPPLICATION

文件:193.9 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEDRIVERAPPLICATION

文件:162.17 Kbytes Page:3 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEDRIVERAPPLICATION

文件:193.9 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEDRIVERAPPLICATION

文件:162.17 Kbytes Page:3 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEDRIVERAPPLICATION

文件:162.17 Kbytes Page:3 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEDRIVERAPPLICATION

文件:162.17 Kbytes Page:3 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconPNPtransistorinaTO-92LMPlasticPackage

文件:866.05 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

Low-FrequencyPowerAmplifierApplications

文件:482.61 Kbytes Page:6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Low-FrequencyPowerAmplifierApplications

文件:120.25 Kbytes Page:4 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Low-FrequencyPowerAmplifierApplications

文件:120.25 Kbytes Page:4 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

Low-FrequencyPowerAmplifierApplications

文件:482.61 Kbytes Page:6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 1A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-CurrentSwitchingApplications

文件:483.76 Kbytes Page:6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentSwitchingApplications

文件:483.76 Kbytes Page:6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

封装/外壳:SC-71 包装:散装 描述:TRANS PNP 50V 2A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-CurrentSwitchingApplications

文件:534.72 Kbytes Page:8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-CurrentSwitchingApplications

文件:534.72 Kbytes Page:8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistor

文件:623.86 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor

文件:623.86 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2SA170产品属性

  • 类型

    描述

  • 型号

    2SA170

  • 制造商

    SANYO Semiconductor Co Ltd

更新时间:2025-5-22 10:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NK/南科功率
TO-252
360000
交期准时服务周到
蓝箭
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
SANYO/三洋
11+
TO-251
1200
原装现货
SANYO
23+
SOT-252
4000
正品原装货价格低
CJ/长电
24+
TO-252
9000
只做原装,欢迎询价,量大价优
东芝
23+
SOT-252
6000
专业优势供应
三洋CJ
2024
252-251
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
长电
25+23+
TO-252
23814
绝对原装正品全新进口深圳现货
CJ/长电
23+
TO-252
50000
全新原装正品现货,支持订货
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价

2SA170芯片相关品牌

  • API
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  • BOARDCOM
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  • NEC
  • SILABS
  • SOURIAU
  • SUPERWORLD

2SA170数据表相关新闻