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2SA170晶体管资料
2SA170别名:2SA170三极管、2SA170晶体管、2SA170晶体三极管
2SA170生产厂家:日本日电公司
2SA170制作材料:Ge-PNP
2SA170性质:射频/高频放大 (HF)_开关管 (S)
2SA170封装形式:直插封装
2SA170极限工作电压:20V
2SA170最大电流允许值:0.05A
2SA170最大工作频率:15MHZ
2SA170引脚数:3
2SA170最大耗散功率:0.175W
2SA170放大倍数:
2SA170图片代号:D-9
2SA170vtest:20
2SA170htest:15000000
- 2SA170atest:0.05
2SA170wtest:0.175
2SA170代换 2SA170用什么型号代替:ASY26,ASY27,ASY48,3AG87A,
2SA170价格
参考价格:¥0.8004
型号:2SA1705S-AN 品牌:ON 备注:这里有2SA170多少钱,2025年最近7天走势,今日出价,今日竞价,2SA170批发/采购报价,2SA170行情走势销售排行榜,2SA170报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
High-VoltageDriverApplications High-VoltageDriverApplications Features •Highbreakdownvoltage. •AdoptionofMBITprocess. •ExcellenthFElinearity. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
HIGHVOLTAGEDRIVERAPPLICATION HIGHVOLTAGEDRIVERAPPLICATION ■FEATURES *Highbreakdownvoltage. *ExcellenthFElinearity. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-200mA Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-200mA Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity Applications Highvoltagedriverapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighBreakdownVoltage ●AdoptionofMBITProcess ●ExcellenthFELinearity | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Highbreakdownvoltage •LowCollector-EmitterSaturationVoltage •HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPEpitaxialPlanarSiliconTransistor FEATURES ●Highbreakdownvoltage. ●AdoptionofMBITprocess. ●ExcellenthFElinearity. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Low-FrequencyGeneral-PurposeAmpApplications???? Low-FrequencyGeneral-PurposeAmplifierApplications Features •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. Applications •AFpoweramplifier,medium-speedswitching,small-sizedmotordriverapplications. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Lowsaturationvotlage. •Largecurrentcapacity. •Fastswitchingspeed. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyAmp,ElectronicGovernorApplications?????? Low-FrequencyAmplifier,ElectronicGovernorApplications Features •Lowcollector-to-emittersaturationvoltage. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications? High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyPowerAmpApplications Low-FrequencyPowerAmplifierApplications Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorAdoptionofFBETprocess Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBETprocess Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBETprocess Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Lowcollector-to-emittersaturationvoltage •Largecurrentcapacity,wideASO •Fastswitchingspeed | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-VoltageSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorHighbreakdownvoltage,largecurrentcapacity BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorHighbreakdownvoltage,largecurrentcapacity BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorHighbreakdownvoltage,largecurrentcapacity BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:162.17 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:193.9 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:162.17 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:193.9 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:162.17 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:162.17 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEDRIVERAPPLICATION 文件:162.17 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconPNPtransistorinaTO-92LMPlasticPackage 文件:866.05 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
Low-FrequencyPowerAmplifierApplications 文件:482.61 Kbytes Page:6 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyPowerAmplifierApplications 文件:120.25 Kbytes Page:4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyPowerAmplifierApplications 文件:120.25 Kbytes Page:4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyPowerAmplifierApplications 文件:482.61 Kbytes Page:6 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 1A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-CurrentSwitchingApplications 文件:483.76 Kbytes Page:6 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications 文件:483.76 Kbytes Page:6 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
封装/外壳:SC-71 包装:散装 描述:TRANS PNP 50V 2A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-CurrentSwitchingApplications 文件:534.72 Kbytes Page:8 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications 文件:534.72 Kbytes Page:8 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistor 文件:623.86 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor 文件:623.86 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
2SA170产品属性
- 类型
描述
- 型号
2SA170
- 制造商
SANYO Semiconductor Co Ltd
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NK/南科功率 |
TO-252 |
360000 |
交期准时服务周到 |
||||
蓝箭 |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SANYO/三洋 |
11+ |
TO-251 |
1200 |
原装现货 |
|||
SANYO |
23+ |
SOT-252 |
4000 |
正品原装货价格低 |
|||
CJ/长电 |
24+ |
TO-252 |
9000 |
只做原装,欢迎询价,量大价优 |
|||
东芝 |
23+ |
SOT-252 |
6000 |
专业优势供应 |
|||
三洋CJ |
2024 |
252-251 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
长电 |
25+23+ |
TO-252 |
23814 |
绝对原装正品全新进口深圳现货 |
|||
CJ/长电 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
2SA170规格书下载地址
2SA170参数引脚图相关
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2SA170数据表相关新闻
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