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2SA170晶体管资料
2SA170别名：2SA170三极管、2SA170晶体管、2SA170晶体三极管
2SA170生产厂家：日本日电公司
2SA170制作材料：Ge-PNP
2SA170性质：射频/高频放大 （HF）_开关管 （S）
2SA170封装形式：直插封装
2SA170极限工作电压：20V
2SA170最大电流允许值：0.05A
2SA170最大工作频率：15MHZ
2SA170引脚数：3
2SA170最大耗散功率：0.175W
2SA170放大倍数：
2SA170图片代号：D-9
2SA170vtest：20
2SA170htest：15000000
- 2SA170atest：0.05
2SA170wtest：0.175
2SA170代换 2SA170用什么型号代替：ASY26,ASY27,ASY48,3AG87A,
2SA170价格
参考价格：￥0.8004
型号：2SA1705S-AN 品牌：ON 备注：这里有2SA170多少钱，2025年最近7天走势，今日出价，今日竞价，2SA170批发/采购报价，2SA170行情走势销售排行榜，2SA170报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Voltage Driver Applications High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. | SANYO 三洋 |   | ||
HIGH VOLTAGE DRIVER APPLICATION HIGH VOLTAGE DRIVER APPLICATION ■ FEATURES * High breakdown voltage. * Excellent hFE linearity. | UTC 友顺 | | ||
Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity Applications High voltage driver applications. | FOSHAN 蓝箭电子 | | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearity | JIANGSU 长电科技 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • High breakdown voltage • Low Collector-Emitter Saturation Voltage • High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For high voltage driver applications. | ISC 无锡固电 | | ||
PNP Epitaxial Planar Silicon Transistor FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearity. | BILIN 银河微电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. | ISC 无锡固电 | | ||
Low-Frequency General-Purpose Amp Applications???? Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector-to-emitter saturation voltage. Applications • AF power amplifier, medium-speed switching, small-sized motor driver applications. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low saturation votlage. • Large current capacity. • Fast switching speed. | SANYO 三洋 | | ||
Low-Frequency Amp, Electronic Governor Applications?????? Low-Frequency Amplifier, Electronic Governor Applications Features • Low collector-to-emitter saturation voltage. | SANYO 三洋 | | ||
High-Current Driver Applications? High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | | ||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | | ||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | | ||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | | ||
High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers. | SANYO 三洋 | | ||
Low-Frequency Power Amp Applications Low-Frequency Power Amplifier Applications Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | SANYO 三洋 | | ||
Bipolar Transistor Adoption of FBET process Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET process Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET process Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | SANYO 三洋 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed | SANYO 三洋 | | ||
High-Voltage Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | SANYO 三洋 | | ||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | SANYO 三洋 | | ||
Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：162.17 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：193.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：162.17 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：193.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：162.17 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：162.17 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE DRIVER APPLICATION 文件：162.17 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications | ONSEMI 安森美半导体 | | ||
PNP Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications | ONSEMI 安森美半导体 | | ||
Silicon PNP transistor in a TO-92LM Plastic Package 文件：866.05 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
PNP Epitaxial Planar Silicon Transistors High-Current Driver Applications | ONSEMI 安森美半导体 | | ||
Low-Frequency Power Amplifi er Applications 文件：482.61 Kbytes Page：6 Pages | SANYO 三洋 | | ||
Low-Frequency Power Amplifier Applications 文件：120.25 Kbytes Page：4 Pages | SANYO 三洋 | | ||
Low-Frequency Power Amplifier Applications 文件：120.25 Kbytes Page：4 Pages | SANYO 三洋 | | ||
Low-Frequency Power Amplifi er Applications 文件：482.61 Kbytes Page：6 Pages | SANYO 三洋 | | ||
封装/外壳：SC-71 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 1A 3NMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications 文件：483.76 Kbytes Page：6 Pages | SANYO 三洋 | | ||
High-Current Switching Applications 文件：483.76 Kbytes Page：6 Pages | SANYO 三洋 | | ||
封装/外壳：SC-71 包装：散装 描述：TRANS PNP 50V 2A 3NMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications 文件：534.72 Kbytes Page：8 Pages | SANYO 三洋 | |
2SA170产品属性
- 类型
描述
- 型号
2SA170
- 制造商
SANYO Semiconductor Co Ltd
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
11050 |
原装现货,当天可交货,原型号开票 |
|||
UTC/友顺 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
CJ/长电 |
25+ |
TO-252 |
32000 |
CJ/长电全新特价2SA1700即刻询购立享优惠#长期有货 |
|||
CJ/长电 |
21+ |
TO-252 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-252 |
23814 |
绝对原装正品全新进口深圳现货 |
|||
SANYO |
24+ |
4489 |
|||||
SANYO/三洋 |
11+ |
TO-251 |
1200 |
原装现货 |
|||
CJ长电 |
2013 |
TO-252 |
1980 |
全新原装 正品现货 |
|||
CJ/长电 |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
CJ/长电 |
24+ |
TO-252 |
9000 |
只做原装，欢迎询价，量大价优 |
2SA170芯片相关品牌
2SA170规格书下载地址
2SA170参数引脚图相关
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2SA170数据表相关新闻
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