-0.8 A, -35V PNP Plastic Encapsulated Transistor

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● For low-frequency output amplification ● High Transition Frequency

PNP Transistors

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TRANSISTOR(PNP)

FEATURES ● Small Flat Package ● High Current Application ● High Transition Frequency

PNP Transistor

Features ● Collector current IC=-0.8A ● Power dissipation PC=0.5W

SOT-89 Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

-0.8 A, -35V PNP Plastic Encapsulated Transistor

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● For low-frequency output amplification ● High Transition Frequency

PNP Epitaxial Planar Transistor

PNP Epitaxial Planar Transistor High Current Application The transistor is subdivided into two groups, O and Y, according to its DC current gain.