SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low VCE(sat) ● Excellent DC current gain characteristics. Power dissipation

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low VCE(sat),Excellent current gain characteristics; complementary pair with 2SC4115. Applications Low Frequency Amplifier.

TRANSISTOR

DESCRIPTION PNP Epitaxial planar type Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.