isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage-: V CE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS ·Designed for high current switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3710 APPLICATIONS • High current switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3710 APPLICATIONS • High current switching applications

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC3710A

High-Speed, High-Current Switching Applications

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