2SA145晶体管资料

  • 2SA145别名:2SA145三极管、2SA145晶体管、2SA145晶体三极管

  • 2SA145生产厂家:日本松下公司

  • 2SA145制作材料:Ge-PNP

  • 2SA145性质:调幅 (AM)_前置放大 (V)_混频 (M)

  • 2SA145封装形式:直插封装

  • 2SA145极限工作电压:15V

  • 2SA145最大电流允许值:0.01A

  • 2SA145最大工作频率:6MHZ

  • 2SA145引脚数:3

  • 2SA145最大耗散功率

  • 2SA145放大倍数

  • 2SA145图片代号:C-47

  • 2SA145vtest:15

  • 2SA145htest:6000000

  • 2SA145atest:0.01

  • 2SA145wtest:0

  • 2SA145代换 2SA145用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,2SA203,3AG54A,

型号 功能描述 生产厂家 企业 LOGO 操作

Low-Frequency Driver Applications

Low-Frequency Driver Applications Features • Adoption of FBET process. • AF amp, AF power amp. • High breakdown voltage : VCEO>80V

SANYO

三洋

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3709A

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION · • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3709 APPLICATIONS • High current switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION · • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3709 APPLICATIONS • High current switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION · • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3709 APPLICATIONS • High current switching applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@lc= -6A • Good Linearity of hFE • High Switching Speed • Complement to Type 2SC3709A APPLICATIONS • Designed for high current switching applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC3709A

TOSHIBA

东芝

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC3710A

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage-: V CE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS ·Designed for high current switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3710 APPLICATIONS • High current switching applications

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@lc= -6A • Good Linearity of hFE • High Switching Speed • Complement to Type 2SC3710 APPLICATIONS • Designed for high current switching applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • Complement to type 2SC3710 APPLICATIONS • High current switching applications

SAVANTIC

TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)

High-Speed, High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC3710A

TOSHIBA

东芝

Epitaxial Planar PNP Silicon Transistor

Features ● High breakdown voltage:VCEO=-120V ● Low noise design:NF=0.2dB(Typ.)

KEXIN

科信电子

PNP SILICON TRANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA1459 is designed for general purpose amplifier and high speed switching applications. FEATURES ● High Frequency Current Gain. ● High Speed Switching. ● Small Output Capacitance. ● Low Collector Saturation Voltage.

NEC

瑞萨

Silicon PNP Power Transistors

文件:218.47 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:218.47 Kbytes Page:4 Pages

JMNIC

锦美电子

Power transistor for high-speed switching applications

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件:154.77 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件:154.77 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件:154.77 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:218.92 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:218.92 Kbytes Page:4 Pages

JMNIC

锦美电子

High-Speed, High-Current Switching Applications

文件:154.63 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Speed, High-Current Switching Applications

文件:154.63 Kbytes Page:5 Pages

TOSHIBA

东芝

EPITAXIAL PLANAR PNP SILICON TRANSISTOR

文件:218.39 Kbytes Page:3 Pages

ROHM

罗姆

EPITAXIAL PLANAR PNP SILICON TRANSISTOR

文件:218.39 Kbytes Page:3 Pages

ROHM

罗姆

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

2SA145产品属性

  • 类型

    描述

  • 型号

    2SA145

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY SANYO TRANSISTORTO-92 -100V -.5A .6W ECB

更新时间:2025-12-25 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC/RENESAS
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
NEC/RENESAS
22+
TO-126
20000
只做原装
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
23+
NA
986
专做原装正品,假一罚百!
NEC
23+
TO-92S
10000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
06+
TO-92S
12000
绝对原装现货!假一赔十!
NEC
24+
30000
NEC
23+
SOT-23
30000
原装正品,假一罚十
NEC
2023+
SOT-23
50000
原装现货
Renesas
1221
25
优势货源原装正品

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