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2SA131晶体管资料
2SA131别名:2SA131三极管、2SA131晶体管、2SA131晶体三极管
2SA131生产厂家:日本日立公司
2SA131制作材料:Ge-PNP
2SA131性质:调幅 (AM)_振荡级 (O)
2SA131封装形式:直插封装
2SA131极限工作电压:9V
2SA131最大电流允许值:0.01A
2SA131最大工作频率:45MHZ
2SA131引脚数:3
2SA131最大耗散功率:
2SA131放大倍数:
2SA131图片代号:D-58
2SA131vtest:9
2SA131htest:45000000
- 2SA131atest:0.01
2SA131wtest:0
2SA131代换 2SA131用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2DSA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54C,
2SA131价格
参考价格:¥0.4293
型号:2SA1312-BL(TE85L,F 品牌:Toshiba 备注:这里有2SA131多少钱,2025年最近7天走势,今日出价,今日竞价,2SA131批发/采购报价,2SA131行情走势销售排行榜,2SA131报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification Complementary to 2SA1310 ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Low noise voltage NV. | Panasonic 松下 | |||
Silicon PNP epitaxial planer type ■ Features ● Allowing supply with the radial taping. ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● Optimum for high-density mounting. | Panasonic 松下 | |||
TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
Silicon PNP Epitaxial Type Features ● High voltage. ● High hFE. ● Low noise. ● Small package. | KEXIN 科信电子 | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package | TOSHIBA 东芝 | |||
TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package | TOSHIBA 东芝 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements to the 2SC3325. | DGNJDZ 南晶电子 | |||
Audio Frequency Low Power Amplifier Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package | TOSHIBA 东芝 | |||
Silicon PNP Epitaxial Features ● High voltage: VCEO = -50 V (min) ● Small package | KEXIN 科信电子 | |||
Audio Frequency Low Power Amplifier Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package | TOSHIBA 东芝 | |||
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package | TOSHIBA 东芝 | |||
TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS) Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1)= 140 to 600 (VCE= −1 V, IC= −0.5 A) : hFE (2)= 60 (min), 120 (typ.), (VCE= -1 V, IC= −4 A) • Low saturation voltage : VCE (sat)= −0.5 V (max) (IC= −2 A, IB | TOSHIBA 东芝 | |||
Audio Power Applications Features ● Low Saturation Voltage : VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) ● Small Flat Package ● Complementary to 2SC2982 | KEXIN 科信电子 | |||
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3328 | TOSHIBA 东芝 | |||
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) • Low pulse noise. Low 1/f noise • Low base spreading resistance: rb | TOSHIBA 东芝 | |||
Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low rbb′, low noise figure, complementary pair with 2SC3329 Applications Low noise audio amplifier applications. | FOSHAN 蓝箭电子 | |||
PNP/NPN Epitaxial Planar Silicon Transistors AF Amp Applications Use • Capable of being used in the low frequency to high frequency range. Features • Large current capacity and wide ASO. | SANYO 三洋 | |||
AF Amp Applications AF Amp Applications Use • Capable of being used in the low frequency to high frequency range. Features • Large current capacity and wide ASO. | SANYO 三洋 | |||
Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
PNP Plastic Encapsulated Transistor FEATURES 1. Large Current Capacity and Wide ASO APPLICATIONS 1. Capable of Being Used in The Low Frequency to High Frequency Range | SECOS 喜可士 | |||
High-Voltage Switching Applications High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. | SANYO 三洋 | |||
Audio Frequency Low Noise Amplifier Applications 文件:622.31 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Transistor for low frequency small-signal amplification | TOSHIBA 东芝 | |||
Audio Frequency Low Noise Amplifier Applications 文件:622.31 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 120V 0.1A SMINI 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
晶体管 | JSCJ 长晶科技 | |||
Transistor for low frequency small-signal amplification | TOSHIBA 东芝 | |||
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 文件:316.31 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
SOT-23 Plastic-Encapsulate Transistors 文件:700.51 Kbytes Page:4 Pages | JIANGSU 长电科技 | |||
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 文件:316.31 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
PNP Transistors 文件:1.05923 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.05923 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS PNP 50V 0.5A SMINI 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
PNP Transistors 文件:1.05923 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
Strobe Flash Applications Audio Power Applications 文件:159.68 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Strobe Flash Applications Audio Power Applications 文件:159.68 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
PNP Transistors 文件:1.22502 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.22502 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.22502 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.22502 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
Power Amplifier Applications Power Switching Applications 文件:186.3 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:155.05 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:155.05 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:186.3 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
TO-92S Plastic-Encapsulate Transistors 文件:518.97 Kbytes Page:3 Pages | JIANGSU 长电科技 | |||
TRANSISTOR (PNP) 文件:120.58 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
TO-92 Plastic-Encapsulate Transistors 文件:371.99 Kbytes Page:3 Pages | JIANGSU 长电科技 | |||
PNP Plastic Encapsulated Transistor 文件:83.96 Kbytes Page:1 Pages | SECOS 喜可士 |
2SA131产品属性
- 类型
描述
- 型号
2SA131
- 制造商
Toshiba
- 功能描述
PNP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
24+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
Toshiba |
25+23+ |
Sot-23 |
31442 |
绝对原装正品全新进口深圳现货 |
|||
PANASONIC |
24+ |
TO-92 |
3000 |
||||
TOSHIBA |
23+ |
SOT23 |
30000 |
正规渠道,只有原装! |
|||
TOSHIBA/东芝 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
TOSHIBA |
24+ |
SOT-23 |
2500 |
原装现货热卖 |
|||
TOSHIBA |
17+ |
SOT-23 |
1640 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
TOSHIBA/东芝 |
20+ |
SOT-23 |
120000 |
只做原装 可免费提供样品 |
2SA131规格书下载地址
2SA131参数引脚图相关
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- 2SA1315
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- 2SA1312
- 2SA1311
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- 2SA1309A
- 2SA1309
- 2SA1308
- 2SA1307
- 2SA1306B
- 2SA1306A
- 2SA1306
- 2SA1305
- 2SA1304
- 2SA1303
- 2SA1302
- 2SA1301
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- 2SA130
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- 2SA1299
- 2SA1298
- 2SA1297
- 2SA1296
- 2SA1295
- 2SA1294
- 2SA1293
- 2SA1292
- 2SA1291
- 2SA1290
- 2SA1289
- 2SA1288
2SA131数据表相关新闻
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