TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −

PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFELinearity. * hFE(1)=140-600, (VCE= -1V,IC= -0.5A) * hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) * Low Saturation Voltage * VCE (SAT

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage

PNP Plastic Encapsulated Transistor

FEATURES • High DC Current gain and excellent hFE linearity • Low Saturation Voltage

TO-92 Plastic-Encapsulate Transistors

FEATURES e High DC Current Gain and Excellent he Linearity e Low Saturation Voltage

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES ● High DC Current gain and excellent hFE linearity ● Low saturation voltage

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High DC current gain, excellent hFE linearity, low saturation voltage Applications Strobo flash, medium power amplifier applications.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER •High Current Capability •High Power Dissipation •Complementary to 2SC3280

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SC3280 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SC3280 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SC3281 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage

POWER TRANSISTORS(15A,200V,150W)

Features 1. Recommend for 125W High Fiderity Audio Frequency Amplifier Output stage. 2. Complementary to 2SC3281

Silicon PNP Power Transistor

DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • Complement to Type 2SC3281 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applic

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SC3281

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SC3281 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3284 APPLICATIONS ·Audio and general purpose

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO=-150V(Min) • Good Linearity of hFE • Complement to Type 2SC3284 APPLICATIONS • Designed for audio and general purpose applications

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SC3284 Application : Audio and General Purpose

Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC3284 APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SC3296 • High breakdown voltage APPLICATIONS • Power amplifier applications • Vertical output applicatios

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SC3296 • High breakdown voltage APPLICATIONS • Power amplifier applications • Vertical output applicatios

TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS)

POWER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • Complementary tjo 2SC3296.

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO = -150V(Min) • Complement to Type 2SC3296 APPLICATIONS • Power amplifier applications. • Vertical output applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SC3296 • High breakdown voltage APPLICATIONS • Power amplifier applications • Vertical output applicatios

Silicon PNP Power Transistors

DESCRIPTION · With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications

Silicon PNP Power Transistors

DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SC3298,2SC3298A,2SC3298B

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • Good Linearity of HFE • High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B • Complement to Type 2SC3298/A/B APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • Good Linearity of HFE • High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B • Complement to Type 2SC3298/A/B APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP Power Transistors

DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SC3298,2SC3298A,2SC3298B

Silicon PNP Power Transistors

DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SC3298,2SC3298A,2SC3298B

COMPLEMENTARY SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS 1.5 AMPERES 200 VOLTS 20 WATTS

Silicon PNP Power Transistors

DESCRIPTION • Good Linearity of HFE • High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B • Complement to Type 2SC3298/A/B APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT Complement to 2SC3299

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • High current switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • High current switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • High current switching applications

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A ■Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping.

Silicon PNP epitaxial planer type

For low-frequency amplification Complementary to 2SC3311A ■ Features ● High foward current transfer ratio hFE. ● Allowing supply with the radial taping. ● Optimum for high-density mounting.

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SA1310 ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Low noise voltage NV.

Silicon PNP epitaxial planer type

■ Features ● Allowing supply with the radial taping. ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● Optimum for high-density mounting.

TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Silicon PNP Epitaxial Type

Features ● High voltage. ● High hFE. ● Low noise. ● Small package.

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package

Audio Frequency Low Power Amplifier Applications

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package

TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package