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2SA13晶体管资料

2SA13别名：2SA13三极管、2SA13晶体管、2SA13晶体三极管
2SA13生产厂家：日本日立公司
2SA13制作材料：Ge-PNP
2SA13性质：调幅（AM）_F
2SA13封装形式：直插封装
2SA13极限工作电压：12V
2SA13最大电流允许值：0.015A
2SA13最大工作频率：8MHZ
2SA13引脚数：3
2SA13最大耗散功率：
2SA13放大倍数：
2SA13图片代号：C-47
2SA13vtest：12
2SA13htest：8000000
2SA13atest：0.015
2SA13wtest：0

2SA13代换 2SA13用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,3AG54A,

2SA13价格

参考价格：￥0.6163

型号：2SA1309AQA 品牌：Panasonic 备注：这里有2SA13多少钱，2026年最近7天走势，今日出价，今日竞价，2SA13批发/采购报价，2SA13行情走势销售排行榜，2SA13报价。

型号	功能描述	生产厂家企业	LOGO
2SA1300	丝印代码：2SA1300；TO-92 Plastic-Encapsulate Transistors FEATURES e High DC Current Gain and Excellent he Linearity e Low Saturation Voltage	DGNJDZ 南晶电子	DGNJDZ
2SA1300	TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SA1300	PNP Plastic Encapsulated Transistor FEATURES • High DC Current gain and excellent hFE linearity • Low Saturation Voltage	SECOS 喜可士	SECOS
2SA1300	TRANSISTOR (PNP) FEATURES ● High DC Current gain and excellent hFE linearity ● Low saturation voltage	KOOCHIN 灏展电子	KOOCHIN
2SA1300	Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High DC current gain, excellent hFE linearity, low saturation voltage Applications Strobo flash, medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1300	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃	TEL	TEL
2SA1300	TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −	TOSHIBA 东芝	TOSHIBA
2SA1300	PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFELinearity. * hFE(1)=140-600, (VCE= -1V,IC= -0.5A) * hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) * Low Saturation Voltage * VCE (SAT	UTC 友顺	UTC
2SA1300	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base	DCCOM 道全	DCCOM
2SA1300	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage	JIANGSU 长电科技	JIANGSU
2SA1301	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC3280 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1301	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER •High Current Capability •High Power Dissipation •Complementary to 2SC3280	WINGS 永盛电子	WINGS
2SA1301	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC3280 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1302	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC3281 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1302	Silicon PNP Power Transistor DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • Complement to Type 2SC3281 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applic	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1302	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SC3281	WINGS 永盛电子	WINGS
2SA1302	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC3281 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1302	POWER TRANSISTORS(15A,200V,150W) Features 1. Recommend for 125W High Fiderity Audio Frequency Amplifier Output stage. 2. Complementary to 2SC3281	MOSPEC 统懋	MOSPEC
2SA1303	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) Complement to type 2SC3284 Application : Audio and General Purpose	SANKEN 三垦	SANKEN
2SA1303	Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications	ISC 无锡固电	ISC
2SA1303	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3284 APPLICATIONS • Audio and general purpose	JMNIC 锦美电子	JMNIC
2SA1303	双极型晶体管硅 PNP 平面外延型三极管・适用于功放输出段。\n・采用具有出色的高频率特性的 LAPT 结构。\n・有配对品。\n・ASO 较广。;	SANKEN 三垦	SANKEN
2SA1303	Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO=-150V(Min) • Good Linearity of hFE • Complement to Type 2SC3284 APPLICATIONS • Designed for audio and general purpose applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1303	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3284 APPLICATIONS ·Audio and general purpose	SAVANTIC	SAVANTIC
2SA1304	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SC3296 • High breakdown voltage APPLICATIONS • Power amplifier applications • Vertical output applicatios	SAVANTIC	SAVANTIC
2SA1304	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO = -150V(Min) • Complement to Type 2SC3296 APPLICATIONS • Power amplifier applications. • Vertical output applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1304	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SC3296 • High breakdown voltage APPLICATIONS • Power amplifier applications • Vertical output applicatios	JMNIC 锦美电子	JMNIC
2SA1304	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SC3296 • High breakdown voltage APPLICATIONS • Power amplifier applications • Vertical output applicatios	ISC 无锡固电	ISC
2SA1304	TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS) POWER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • Complementary tjo 2SC3296.	TOSHIBA 东芝	TOSHIBA
2SA1305	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications	ISC 无锡固电	ISC
2SA1305	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications	JMNIC 锦美电子	JMNIC
2SA1305	Silicon PNP Power Transistors DESCRIPTION · With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications	SAVANTIC	SAVANTIC
2SA1306	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications	SAVANTIC	SAVANTIC
2SA1306	Silicon PNP Power Transistors DESCRIPTION • Good Linearity of HFE • High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B • Complement to Type 2SC3298/A/B APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1306	Silicon PNP Power Transistors DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SC3298,2SC3298A,2SC3298B	JMNIC 锦美电子	JMNIC
2SA1306A	Silicon PNP Power Transistors DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SC3298,2SC3298A,2SC3298B	JMNIC 锦美电子	JMNIC
2SA1306A	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications	SAVANTIC	SAVANTIC
2SA1306A	Silicon PNP Power Transistors DESCRIPTION • Good Linearity of HFE • High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B • Complement to Type 2SC3298/A/B APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1306B	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS • Power amplifier applications • Driver stage amplifier applications	SAVANTIC	SAVANTIC
2SA1306B	Silicon PNP Power Transistors DESCRIPTION • Good Linearity of HFE • High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B • Complement to Type 2SC3298/A/B APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1306B	Silicon PNP Power Transistors DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SC3298,2SC3298A,2SC3298B	JMNIC 锦美电子	JMNIC
2SA1306B	COMPLEMENTARY SILICON POWER TRANSISTORS SILICON POWER TRANSISTORS 1.5 AMPERES 200 VOLTS 20 WATTS	MOTOROLA 摩托罗拉	MOTOROLA
2SA1307	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT Complement to 2SC3299	WINGS 永盛电子	WINGS
2SA1308	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • High current switching applications	SAVANTIC	SAVANTIC
2SA1308	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • High current switching applications	ISC 无锡固电	ISC
2SA1308	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • High current switching applications	JMNIC 锦美电子	JMNIC
2SA1309A	Silicon NPN epitaxial planer type(For low-frequency amplification) Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A ■Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping.	PANASONIC 松下	PANASONIC
2SA1309A	Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A ■ Features ● High foward current transfer ratio hFE. ● Allowing supply with the radial taping. ● Optimum for high-density mounting.	PANASONIC 松下	PANASONIC
2SA1309A	Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SA1310	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification Complementary to 2SA1310 ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Low noise voltage NV.	PANASONIC 松下	PANASONIC
2SA1310	Silicon PNP epitaxial planer type ■ Features ● Allowing supply with the radial taping. ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● Optimum for high-density mounting.	PANASONIC 松下	PANASONIC
2SA1312	TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1312	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1312	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1312	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1312	Silicon PNP Epitaxial Type Features ● High voltage. ● High hFE. ● Low noise. ● Small package.	KEXIN 科信电子	KEXIN
2SA1312BL	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1312-BL	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1312-GR	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO= −120 V • Excellent hFElinearity: hFE(IC= −0.1 mA)/ hFE(IC= −2 mA) h= 0.95 (typ.) • High hFE: hFE= 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1313	Audio Frequency Low Power Amplifier Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package	TOSHIBA 东芝	TOSHIBA

2SA13产品属性

类型
描述
PCM(W)：
0.75
IC(A)：
2
VCBO(V)：
20
VCEO(V)：
10
VEBO(V)：
6
hFEMin：
140
hFEMax：
600
hFE@VCE(V)：
1
hFE@IC(A)：
0.5
VCE(sat)(V)：
0.82
VCE(sat)\u001E@IC(A)：
2
VCE(sat)\u001E@IB(A)：
0.1
Package：
TO-92

2SA13供应商更多...

更新时间：2026-5-14 13:54:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市腾亿芯科技有限公司	2SA1300Y	CJ/长电	25+	TO-92	20000	原装	询价
富凯科技(深圳）有限公司	2SA1300L-Y	UTC/友顺	24+	NA	8000	只做原装，欢迎询价，量大价优	询价
深圳市正纳电子有限公司	2SA1300-GR	TOSHIBA	ROHS全新原装	TO-92	10000	东芝半导体QQ350053121正纳全系列代理经销	询价
洪芯国际半导体（深圳）有限公司	2SA1300Y	CJ/长电	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市博中泰实业有限公司	2SA1300-GR开关	TOSHIBA/东芝	25+	TO-92	90000	全新原装现货	询价
深圳市弘为电子有限公司	2SA1300	TOS	24+	原厂封装	5500	原装现货假一罚十	询价
深圳市宇创芯科技有限公司	2SA1300L-GR-AB3-R	UTC/友顺	24+	SOT-89	9600	原装现货,优势供应,支持实单!	询价
深圳市福田区亿兴成电子商行	2SA1300	TOSHIBA	TO	6688	38	现货库存	询价
深圳市科芯源微电子有限公司	2SA1300	CJ/长电	2026+	TO92	54648	百分百原装现货实单必成欢迎询价	询价
深圳市润联芯城科技有限公司	2SA1300L-GR-AB3-R	UTC/友顺	23+	SOT-89	50000	原装正品支持实单	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SA13晶体管资料

2SA13价格

2SA13产品属性

2SA13供应商更多...

2SA13芯片相关品牌

2SA13规格书下载地址

2SA13参数引脚图相关

2SA13数据表相关新闻

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2SA1037AKT146Q

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