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2SA129晶体管资料
2SA129别名:2SA129三极管、2SA129晶体管、2SA129晶体三极管
2SA129生产厂家:日本东芝公司
2SA129制作材料:Ge-PNP
2SA129性质:开关管 (S)
2SA129封装形式:直插封装
2SA129极限工作电压:40V
2SA129最大电流允许值:0.6A
2SA129最大工作频率:>15MHZ
2SA129引脚数:3
2SA129最大耗散功率:0.17W
2SA129放大倍数:β>35
2SA129图片代号:D-58
2SA129vtest:40
2SA129htest:15000100
- 2SA129atest:0.6
2SA129wtest:0.17
2SA129代换 2SA129用什么型号代替:ASY76,ASY77,2N1309,3AK34A,
2SA129价格
参考价格:¥12.6935
型号:2SA1294 品牌:Sanken 备注:这里有2SA129多少钱,2025年最近7天走势,今日出价,今日竞价,2SA129批发/采购报价,2SA129行情走势销售排行榜,2SA129报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
60V/7A High-Speed Switching Applications 60V/7A High-Speed Switching Applications Features • Low saturation voltage. • Excellent current dependence of hFE. • Short switching time. Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). • | SANYO 三洋 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Short switching time • Low collector saturation voltage • Complement to type 2SC3254 APPLICATIONS • Various inductance lamp drivers for electrical equipment • Inverters,converters • Power amplifier • Switching regulator ,driver | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Short switching time • Low collector saturation voltage • Complement to type 2SC3254 APPLICATIONS • Various inductance lamp drivers for electrical equipment • Inverters,converters • Power amplifier • Switching regulator ,driver | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Short switching time • Low collector saturation voltage • Complement to type 2SC3254 APPLICATIONS • Various inductance lamp drivers for electrical equipment • Inverters,converters • Power amplifier • Switching regulator ,driver | SAVANTIC | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(satr -0.4V(Max.)@lc= -5A • Fast Switching Speed • Complement to Type 2SC3255 APPLICATIONS • Various inductance lamp drivers for electrical equipment. • Inverters, converters(strobo, flash, fluorescent lamp lighting circuits). • Power amp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for electrical equipment. • Inverters, converters • Power amplifier • High-speed switching | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for electrical equipment. • Inverters, converters • Power amplifier • High-speed switching | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for electrical equipment. • Inverters, converters • Power amplifier • High-speed switching | SAVANTIC | |||
60V/10A High-Speed Switching Applications 60V/10A High-Speed Switching Applications Features • Low saturation voltage. • Excellent current dependence of hFE. • Short switching time. Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). • | SANYO 三洋 | |||
60V/15A High-Speed Switching Applications 60V/15A High-Speed Switching Applications Features • Low saturation voltage. • Excellent dependence of hFE on current. • Fast switching time. Applications • Various inductance, lamp drivers for electrical equipment. • Inverters, converters (strobo, flash, fluorescent lamp lighting circu | SANYO 三洋 | |||
TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Satuation Voltage : VCE(sat) = - 0.4V (Max.) at IC = -3A • High Speed Swtiching time : tstg = 1.0µs(Typ.) • Complementary to 2SC3258. | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor DESCRIPTION • Low CollectorSaturationVoltage- : VCE(sat)= -0.4V(Max.)@lc= -3A • Fast Switching Speed • Complement to Type 2SC325 APPLICATIONS • Designed for high current switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3263 APPLICATIONS • Audio and general purpose | SAVANTIC | |||
isc Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC3263 APPLICATIONS • Designed for audio and general purpose applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3263 APPLICATIONS • Audio and general purpose | JMNIC 锦美电子 | |||
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) Application : Audio and General Purpose | Sanken 三垦 | |||
Silicon PNP Epitaxial Planar Transistor(Audio and General) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application : Audio and General | Sanken 三垦 | |||
POWER TRANSISTORS(17A,230V,200W) HIGH-POWER PNP SILICON POWER TRANSISTORS | MOSPEC 统懋 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3264 APPLICATIONS ·Designed for audio and general purpose applications. | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC3264 APPLICATIONS ·Audio and general purpose applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC3264 APPLICATIONS ·Audio and general purpose applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC3264 APPLICATIONS • Designed for audio and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low Saturation Voltage: VCE (sat) ● High DC Current Gain | JIANGSU 长电科技 | |||
TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
PNP Plastic Encapsulated Transistor FEATURES ● Low Saturation Voltage: VCE(sat) ● High DC Current Gain | SECOS 喜可士 | |||
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= −0.5 V (max) @IC= −2 A • Complementary to 2SC3266. | TOSHIBA 东芝 | |||
TO-92 Plastic-Encapsulate Transistors Features Low Saturation Voltage: VCE (sat) High DC Current Gain | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors Features Low Saturation Voltage: VCE (sat) High DC Current Gain | DGNJDZ 南晶电子 | |||
MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge | TOSHIBA 东芝 | |||
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= −0.5 V (max) @IC= −2 A • Complementary to 2SC3267. | TOSHIBA 东芝 | |||
TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS) Low Frequency Power Amplifier Application Power Switching Applications • High DC current gain: hFE = 100 to 320 • Low saturation voltage: VCE (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) • Suitable for driver stage of small motor • Complementary to 2SC3265 • Small package | TOSHIBA 东芝 | |||
Silicon PNP Epitaxial ■ Features ● Collector Current Capability IC=-0.8A ● Collector Emitter Voltage VCEO=-30V ● Low Frequency Power Amplifier Application ● Power Swithing Applications ● Complementary to 2SC3265 | KEXIN 科信电子 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low Frequency Power Amplifier Application ● Power Swithing Applications | JIANGSU 长电科技 | |||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES ● Low Frequency Power Amplifier Application ● Power Swithing Applications | HTSEMI 金誉半导体 | |||
PNP Silicon Plastic Encapsulated Transistor -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor FEATURES • Low Frequency Power Amplifier Application • Power Switching Applications | SECOS 喜可士 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Application Power Swithing Applications | DGNJDZ 南晶电子 | |||
PNP Transistors ■ Features ● Collector Current Capability IC=-0.8A ● Collector Emitter Voltage VCEO=-30V ● Low Frequency Power Amplifier Application ● Power Swithing Applications ● Complementary to 2SC3265 | YFWDIODE 佑风微 | |||
PNP TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION ● Complement to MMPT2SC3265LT1 ● Collector-current:Ic=-500mA ● High Total Power Dissipation:Pc=225mW | WINNERJOIN 永而佳 | |||
PNP General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Power switching application • Low frequency power amplifier application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. S | MCC | |||
PNP Transistors ■ Features ● Collector Current Capability IC=-0.8A ● Collector Emitter Voltage VCEO=-30V ● Low Frequency Power Amplifier Application ● Power Swithing Applications ● Complementary to 2SC3265 | YFWDIODE 佑风微 | |||
PNP Transistors ■ Features ● Collector Current Capability IC=-0.8A ● Collector Emitter Voltage VCEO=-30V ● Low Frequency Power Amplifier Application ● Power Swithing Applications ● Complementary to 2SC3265 | YFWDIODE 佑风微 | |||
PNP General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Power switching application • Low frequency power amplifier application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. S | MCC | |||
Silicon PNP Power Transistor 文件:187.16 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:203.3 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:203.3 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:165.74 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:165.74 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
60V/10A High-Speed Switching Applications | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors 文件:165.74 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:166.45 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor 文件:193.87 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:166.45 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:180.7 Kbytes Page:3 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:148.61 Kbytes Page:3 Pages | SAVANTIC | |||
60V/15A High-Speed Switching Applications | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors 文件:166.45 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:270.18 Kbytes Page:4 Pages | JMNIC 锦美电子 |
2SA129产品属性
- 类型
描述
- 型号
2SA129
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY SANYO TRANSISTORTO-220AB -80V -7A 35W BCE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA |
14+ |
SOT-23 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TOSHIBA |
23+ |
SMD |
120000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
TOSHIBA |
TO-92S |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA/东芝 |
25+ |
TO-92S |
880000 |
明嘉莱只做原装正品现货 |
|||
Bychip/百域芯 |
21+ |
SOT-23 |
30000 |
实单必成 质强价优 可开13点增值税 |
|||
25+23+ |
SMD |
39478 |
绝对原装正品全新进口深圳现货 |
||||
TOSHIBA/东芝 |
23+ |
TO-92S |
6500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOSHIBA |
24+ |
TO-92S |
12600 |
2SA129芯片相关品牌
2SA129规格书下载地址
2SA129参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SA1312
- 2SA1310
- 2SA1308
- 2SA1307
- 2SA1306
- 2SA1305
- 2SA1304
- 2SA1303
- 2SA1302
- 2SA1301
- 2SA1300
- 2SA130
- 2SA13
- 2SA12H
- 2SA1299
- 2SA1298
- 2SA1297
- 2SA1296
- 2SA1295
- 2SA1294
- 2SA1293
- 2SA1292
- 2SA1291
- 2SA1290
- 2SA1289
- 2SA1288
- 2SA1287
- 2SA1286
- 2SA1285A
- 2SA1285
- 2SA1284
- 2SA1283
- 2SA1282(A)
- 2SA1282
- 2SA1281
- 2SA1280
- 2SA128
- 2SA1279
- 2SA1278
- 2SA1277
- 2SA1276
- 2SA1275
- 2SA1274
- 2SA1273
- 2SA1272
- 2SA1271
- 2SA1270
- 2SA1267
- 2SA1266
- 2SA1265
- 2SA1264
2SA129数据表相关新闻
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DdatasheetPDF页码索引
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