EPITAXIAL PLANAR SUPER / ULTRA MINI MOLD PNP SILICON TRANSISTORS

Features 1) Low noise : NF = 0.5dB (Typ.) 2) Complementary pair with 2SC2412K/2SC4081.

晶体管

General Purpose Amplification Transistor

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Small Signal Plastic Encapsulate Transistor

FEATURES • Excellent hFE linearity. • Complements of the 2SC2412

TRANSISTOR(PNP)

FEATURES ● Excellent hFE linearity. ● Complments the 2SC2412

PNP Silicon General Purpose Transistor

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PNP Silicon Transistor

VOLTAGE 50 Volts CURRENT 150 mAmpere FEATURE ​​​​​​​* Surface mount package. (SOT-23) * Low cob. Cob=4.0pF(Typ.) * High saturation current capability. * PC= 150mW (Total),120mW per element must not be exceeded. * Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) APPLICATION * Medium Po

PNP Silicon Transistor