PNP Plastic-Encapsulate Transistor

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中等功率双极型晶体管

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

PNP EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES * Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) * High speed switching time: tSTG=1.0μs(TYP) * Complement to UTC 2SC2655

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

One Watt High Current PNP Transistor Features • Pb−Free Packages are Available*

TO-92MOD Plastic-Encapsulated Transistors

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SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PNP 50V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages