isc N-Channel MOSFET Transistor

• FEATURES • Drain Current: ID= 33A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 85mΩ (Max) • Fast Switching • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • High efficiency