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位置：首页 > IC中文资料第5737页 > 2N70

2N70晶体管资料

  • 2N700(A,/18)别名：2N700(A,/18)三极管、2N700(A,/18)晶体管、2N700(A,/18)晶体三极管

  • 2N700(A,/18)生产厂家：CSR_美国摩托罗拉半导体公司_SSI_SYL

  • 2N700(A,/18)制作材料：Ge-PNP

  • 2N700(A,/18)性质：调幅 （AM）_调频 （FM）

  • 2N700(A,/18)封装形式：直插封装

  • 2N700(A,/18)极限工作电压：25V

  • 2N700(A,/18)最大电流允许值：0.05A

  • 2N700(A,/18)最大工作频率：800MHZ

  • 2N700(A,/18)引脚数：4

  • 2N700(A,/18)最大耗散功率：0.075W

  • 2N700(A,/18)放大倍数：

  • 2N700(A,/18)图片代号：D-13

  • 2N700(A,/18)vtest：25

  • 2N700(A,/18)htest：800000000

  • 2N700(A,/18)atest：0.05

  • 2N700(A,/18)wtest：0.075

  • 2N700(A,/18)代换 2N700(A,/18)用什么型号代替：AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,

2N70价格

参考价格：￥0.2874

型号：2N7000 品牌：FAIRCHILD 备注：这里有2N70多少钱，2025年最近7天走势，今日出价，今日竞价，2N70批发/采购报价，2N70行情走势销售排行榜，2N70报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N70

2Amps,700VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N70isahighvoltageMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersupplies,P

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapability.

KECKEC CORPORATION

KEC株式会社

KEC
2N7000

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:5Ω *LowInputCapacitance:60PF *LowOutputCapacitance:25PF *LowThreshole:1.4V(TYE) *FastSwitchingSpeed:10ns

WEITRON

Weitron Technology

WEITRON
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor •Powerdissipation350mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

Diotec
2N7000

N-channelenhancementmodeverticalD-MOStransistor

N-channelenhancementmodeverticalD-MOStransistorinaTO-92variantenvelope,intendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES 1.LowRDS(on) 2.DirectinterfacetoC-MOS,TTL,etc. 3.High-speedswitching 4.Nosecondarybreakdown.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

2N7000

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

Calogic

Calogic, LLC

Calogic
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-92package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N7000

MOSFET(N-Channel)

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2N7000

N-ChannelMOSFET

Features •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Marking:2N7000 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7000

MOSFET(N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX
2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical

semiWell

SemiWell Semiconductor

semiWell
2N7000

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
2N7000

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000

TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

DCCOM

Dc Components

DCCOM
2N7000

N-ChannelEnhancementModePowerMos.FET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2N7000

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

DIODESDiodes Incorporated

美台半导体

DIODES
2N7000

N-ChannelEnhancementModeMOSFET

■Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2N7000

N-ChannelEnhancementModePowerMOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS
2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000_V01

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000A

FIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontroolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式会社

KEC
2N7000BU

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000-D26Z

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000-D74Z

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000-D75Z

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000G

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
2N7000G

SmallSignalMOSFET200mAmps,60Volts

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000K

NChannelMOSFETESDProtected2000V

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式会社

KEC
2N7000KL

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
2N7000KL-TR1

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
2N7000P

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO *RDS(on)=5Ω

DIODESDiodes Incorporated

美台半导体

DIODES
2N7000R

Plastic-EncapsulateMOSFET

FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI
2N7000RLRA

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000RLRM

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000RLRP

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000TA

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7000Z

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000ZG-T92-B

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000ZG-T92-K

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000ZG-T92-R

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000ZL1

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7000ZL-T92-B

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000ZL-T92-K

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7000ZL-T92-R

115mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7000Zhasbeendesignedtominimizeon-stateresistancetoproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,low

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7001T

2N7001TSingle-BitDual-SupplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •Operatingtemperature:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCisolationfeature –IfeitherVCCinputisbelow100mV,theoutput

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001T

2N7001T-Q1Single-bitDual-supplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •AEC-Q100automotivequalified •Operatingtemperaturegrade1:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCIsolationFeature –I

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001TDCK

2N7001TSingle-BitDual-SupplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •Operatingtemperature:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCisolationfeature –IfeitherVCCinputisbelow100mV,theoutput

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001TDCKR

2N7001TSingle-BitDual-SupplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •Operatingtemperature:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCisolationfeature –IfeitherVCCinputisbelow100mV,theoutput

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001TDCKR.Z

2N7001TSingle-BitDual-SupplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •Operatingtemperature:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCisolationfeature –IfeitherVCCinputisbelow100mV,theoutput

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001TDCKRQ1

2N7001T-Q1Single-bitDual-supplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •AEC-Q100automotivequalified •Operatingtemperaturegrade1:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCIsolationFeature –I

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001TDPW

2N7001TSingle-BitDual-SupplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •Operatingtemperature:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCisolationfeature –IfeitherVCCinputisbelow100mV,theoutput

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2
2N7001TDPWR

2N7001TSingle-BitDual-SupplyBufferedVoltageSignalConverter

1Features •Upanddowntranslationacross1.65Vto3.6V •Operatingtemperature:–40°Cto+125°C •Maximumquiescentcurrent(ICCA+ICCB)of14μA (125°Cmaximum) •Upto100Mbpssupportacrossthefullsupply range •VCCisolationfeature –IfeitherVCCinputisbelow100mV,theoutput

TI2Texas Instruments

德州仪器美国德州仪器公司

TI2

2N70产品属性

  • 类型

    描述

  • 型号

    2N70

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    2 Amps, 700 Volts N-CHANNEL POWER MOSFET

2N70供应商更多...

更新时间：2025-6-3 17:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳良洲科技有限公司
2N7002-T1-E3
VISHAY
23+
NA
2374
询价
深圳市澳亿芯电子科技有限公司
2N7002K-T1-GE3
VISHAY
24+
SOT-23
12000
原装
询价
深圳市纳立科技有限公司
2N7002KW
ON-SEMI
22+
N/A
3000
原装正品 香港现货
询价
深圳市汇莱威科技有限公司
2N7002-TP
MCC(美微科)
24+
BGA
540010
自己库存,有更多量
询价
深圳市联世界科技有限公司
2N7002K-7
CJ
24+/25+
TO-92L
12000
100%原装正品真实库存,支持实单
询价
深圳市欧立现代科技有限公司
2N7002K-7-F-82
DIODES
24+
SOT23
21000
原装现货,可开13%税票
询价
深圳市坤融电子科技有限公司
2N7002LT1G
ON/安森美
24+
SOT23
8950
BOM配单专家,发货快,价格低
询价
深圳市煦洪科技有限公司
2N7002KDW-TP
MCC
25+
SOT-363-6
18000
原厂授权一级代理，专注军工、汽车、医疗、工业、新能源、电力！
询价
深圳市赛特兴科技有限公司
2N7002LT1G
ON
23+
N/A
10000
正规渠道,只有原装!
询价
标准国际(香港)有限公司
2N7002LT1G
2015+
6000
公司现货库存
询价

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2N70规格书下载地址

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2N70数据表相关新闻

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