2N604晶体管资料

  • 2N604(A)别名:2N604(A)三极管、2N604(A)晶体管、2N604(A)晶体三极管

  • 2N604(A)生产厂家:CSR_IDI_SCA

  • 2N604(A)制作材料:Ge-PNP

  • 2N604(A)性质:射频/高频放大 (HF)

  • 2N604(A)封装形式:直插封装

  • 2N604(A)极限工作电压:30V

  • 2N604(A)最大电流允许值

  • 2N604(A)最大工作频率:60MHZ

  • 2N604(A)引脚数:3

  • 2N604(A)最大耗散功率:0.12W

  • 2N604(A)放大倍数

  • 2N604(A)图片代号:D-9

  • 2N604(A)vtest:30

  • 2N604(A)htest:60000000

  • 2N604(A)atest:0

  • 2N604(A)wtest:0.12

  • 2N604(A)代换 2N604(A)用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,3AG95A,

2N604价格

参考价格:¥1.8628

型号:2N6040G 品牌:ON 备注:这里有2N604多少钱,2025年最近7天走势,今日出价,今日竞价,2N604批发/采购报价,2N604行情走势销售排行榜,2N604报价。
型号 功能描述 生产厂家&企业 LOGO 操作

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美国中央半导体

Central

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •·HighDCCurrentGain- :hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-60V(Min) •LowCollector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max)@IC=-4A •ComplementtoType2N6043 APPLICATIONS •Designedforgeneralpurposeamp

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):-2.0V(Max)@IC=-4.0A APPLICATIONS ·Designedformediumpowerswitchingamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-4A •ComplementtoType2N6044 APPLICATIONS •Designedforgeneralpurposeamplifierandl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美国中央半导体

Central

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美国中央半导体

Central

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PNPDARLINGTONTRANSISTOR

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-2.0V(Max)@IC=-3A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):2.0V(Max)@IC=4.0A APPLICATIONS ·Designedformediumpowerswitchingamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2N6040/6041/6042 •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2N6040/6041/6042 •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral-purposeamplifierandlow-speedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2N6040/6041/6042 •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral-purposeamplifierandlow-speedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2N6040/6041/6042 •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=80V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):2V(Max)@IC=4A APPLICATIONS ·Designedforgeneralpurposeamplifierandlowspeed switchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNDARLINGTONTRANSISTOR

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNTransistorBareDie

Features: Collectorcurrentupto8A Veryhighcurrentgain Enableshighimpedancecircuitry SolderableBackMetal HighReliabilitytestedgradesforMilitary+Space

SS

Silicon Supplies

SS

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNSiliconPowerDarlingtonTransistor

GENERALDESCRIPTION •Halogenfreeavailableuponrequestbyaddingsuffix-HF •SiliconNPNmediumpowerDarlingtontransistorsinaplasticenvelope,primarilyforuseinlow-speedswitchingandgeneralpurpose. •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Se

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2N6040/6041/6042 •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2N6040/6041/6042 •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral-purposeamplifierandlow-speedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Complementtotype2N3054A APPLICATIONS •Designedforgeneralpurposeswitchingandamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

4AMPEREPOWERTRANSISTORPNPSILICON

2N6049-4AMPEREPOWERTRANSISTORPNPSILICON 2N6233,2N6235-5AMPEREPOWERTRANSISTORPNPSILICON

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Complementtotype2N3054A APPLICATIONS •Designedforgeneralpurposeswitchingandamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWERTRANSISTORPNPSILICON

MEDIUMPOWERPNPSILICONTRANSISTOR 4AMPEREPOWERTRANSISTORPNPSILICON55VOLTS75WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

文件:260.18 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central

PlasticMedium-PowerComplementarySiliconTransistors

文件:152.48 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PlasticMedium-PowerComplementarySiliconTransistors

文件:113.08 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2N604产品属性

  • 类型

    描述

  • 型号

    2N604

  • 功能描述

    达林顿晶体管 PNP Darl SW

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-5-28 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
21+
TO-220(TO-220-3)
8080
只做原装,质量保证
MOT
05+
TO-220
45
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-220
8
正规渠道,只有原装!
三年内
1983
只做原装正品
2N6040
23
23
MOT
21+
TO-220
53
原装现货假一赔十
ON
2024
TO-220
58209
16余年资质 绝对原盒原盘代理渠道 更多数量
BOCA
23+
NA
19960
只做进口原装,终端工厂免费送样
ON/安森美
24+
TO-220(TO-220-3)
30000
原装正品公司现货,假一赔十!

2N604芯片相关品牌

  • 3M
  • AVX
  • ECE
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

2N604数据表相关新闻