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2N604晶体管资料

2N604(A)别名：2N604(A)三极管、2N604(A)晶体管、2N604(A)晶体三极管
2N604(A)生产厂家：CSR_IDI_SCA
2N604(A)制作材料：Ge-PNP
2N604(A)性质：射频/高频放大（HF）
2N604(A)封装形式：直插封装
2N604(A)极限工作电压：30V
2N604(A)最大电流允许值：
2N604(A)最大工作频率：60MHZ
2N604(A)引脚数：3
2N604(A)最大耗散功率：0.12W
2N604(A)放大倍数：
2N604(A)图片代号：D-9
2N604(A)vtest：30
2N604(A)htest：60000000
2N604(A)atest：0
2N604(A)wtest：0.12

2N604(A)代换 2N604(A)用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,3AG95A,

2N604价格

参考价格：￥1.8628

型号：2N6040G 品牌：ON 备注：这里有2N604多少钱，2025年最近7天走势，今日出价，今日竞价，2N604批发/采购报价，2N604行情走势销售排行榜，2N604报价。

型号	功能描述	生产厂家企业	LOGO
2N6040	COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M	ONSEMI 安森美半导体	ONSEMI
2N6040	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044	boca 博卡	boca
2N6040	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6040	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	Central	Central
2N6040	POWER TRANSISTORS(10A,80W) . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto	MOSPEC 统懋	MOSPEC
2N6040	isc Silicon PNP Darlington Power Transistor DESCRIPTION •· High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type 2N6043 APPLICATIONS • Designed for general purpose amp	ISC 无锡固电	ISC
2N6040	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -2.0V(Max) @IC= -4.0A APPLICATIONS · Designed for medium power switching amplifier applications.	ISC 无锡固电	ISC
2N6040	POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6041	POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6041	isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type 2N6044 APPLICATIONS • Designed for general purpose amplifier and l	ISC 无锡固电	ISC
2N6041	POWER TRANSISTORS(10A,80W) . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto	MOSPEC 统懋	MOSPEC
2N6041	Transistor General Purpose Description: A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits. Features: • High DC Current Gain • Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min. • Monolithic Construction With Built-in Base-	MULTICOMP 易络盟	MULTICOMP
2N6041	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	Central	Central
2N6041	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6041	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044	boca 博卡	boca
2N6041	COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M	ONSEMI 安森美半导体	ONSEMI
2N6042	COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M	ONSEMI 安森美半导体	ONSEMI
2N6042	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044	boca 博卡	boca
2N6042	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6042	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	Central	Central
2N6042	POWER TRANSISTORS(10A,80W) . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto	MOSPEC 统懋	MOSPEC
2N6042	PNP DARLINGTON TRANSISTOR COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6042	POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6042G	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -2.0V(Max) @IC=-3A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.	ISC 无锡固电	ISC
2N6043	Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):2.0V(Max) @IC=4.0A APPLICATIONS · Designed for medium power switching amplifier applications.	ISC 无锡固电	ISC
2N6043	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications	ISC 无锡固电	ISC
2N6043	POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6043	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications	SAVANTIC	SAVANTIC
2N6043	POWER TRANSISTORS(10A,80W) . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto	MOSPEC 统懋	MOSPEC
2N6043	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	Central	Central
2N6043	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6043	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044	boca 博卡	boca
2N6043	COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M	ONSEMI 安森美半导体	ONSEMI
2N6044	COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M	ONSEMI 安森美半导体	ONSEMI
2N6044	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6044	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044	boca 博卡	boca
2N6044	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	Central	Central
2N6044	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications	SAVANTIC	SAVANTIC
2N6044	POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6044	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications	ISC 无锡固电	ISC
2N6044	POWER TRANSISTORS(10A,80W) . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto	MOSPEC 统懋	MOSPEC
2N6044	Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 2V(Max) @IC= 4A APPLICATIONS · Designed for general purpose amplifier and low speed switching applications.	ISC 无锡固电	ISC
2N6045	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications	ISC 无锡固电	ISC
2N6045	NPN DARLINGTON TRANSISTOR COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6045	POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6045	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications	SAVANTIC	SAVANTIC
2N6045	NPN Transistor Bare Die Features: Collector current up to 8A Very high current gain Enables high impedance circuitry Solderable Back Metal High Reliability tested grades for Military + Space	SS	SS
2N6045	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6045	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	Central	Central
2N6045	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044	boca 博卡	boca
2N6045	POWER TRANSISTORS(10A,80W) . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto	MOSPEC 统懋	MOSPEC
2N6045	NPN Silicon Power Darlington Transistor GENERAL DESCRIPTION • Halogen free available upon request by adding suffix -HF • Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for use in low-speed switching and general purpose. • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. Se	MCC	MCC
2N6045	COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M	ONSEMI 安森美半导体	ONSEMI
2N6049	4 AMPERE POWER TRANSISTOR PNP SILICON 2N6049 - 4 AMPERE POWER TRANSISTOR PNP SILICON 2N6233, 2N6235 - 5 AMPERE POWER TRANSISTOR PNP SILICON	Motorola 摩托罗拉	Motorola
2N6049	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Complement to type 2N3054A APPLICATIONS • Designed for general purpose switching and amplifier applications	ISC 无锡固电	ISC
2N6049	Power Transistors Power Transistors TO-66 Case	Central	Central
2N6049	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Complement to type 2N3054A APPLICATIONS • Designed for general purpose switching and amplifier applications	SAVANTIC	SAVANTIC
2N6049	POWER TRANSISTOR PNP SILICON MEDIUM POWER PNP SILICON TRANSISTOR 4 AMPERE POWER TRANSISTOR PNP SILICON 55 VOLTS 75 WATTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6040	POWER TRANSISTORS(10A,80W)	MOSPEC 统懋	MOSPEC
2N6040	Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington	Central	Central

2N604产品属性

类型
描述
型号
2N604
功能描述
达林顿晶体管 PNP Darl SW
RoHS
否
制造商
Texas Instruments
配置
Octal
晶体管极性
NPN 集电极—发射极最大电压
VCEO
50 V 发射极 - 基极电压
VEBO
集电极—基极电压
最大直流电集电极电流
0.5 A
最大工作温度
+ 150 C
安装风格
SMD/SMT
封装/箱体
SOIC-18
封装
Reel

2N604供应商更多...

更新时间：2025-12-25 15:35:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	2N6040G	ON/安森美	2021+	TO-220(TO-220-3)	7600	原装现货，欢迎询价	询价
深圳市恒凯威科技开发有限公司	2N6040G	ON/安森美	21+	TO-220(TO-220-3)	8080	只做原装,质量保证	询价
深圳市科恒伟业电子有限公司	2N6040G	ON/安森美	2450+		8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市富芯乐电子科技有限公司	2N6040	ON	24+	TO-220	10000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市富利微电子科技有限公司	2N6040G	ON/安森美	24+	TO-220(TO-220-3)	30000	原装正品公司现货,假一赔十!	询价
深圳市纳立科技有限公司	2N6040G		三年内		1983	只做原装正品	询价
深圳市华来深电子有限公司	2N6040G	ON	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
艾睿（深圳）半导体有限公司	2N6040G	ON(安森美)	2447	TO-220(TO-220-3)	105000	50个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市创新迹电子有限公司	2N6040G	ON/安森美	22+	TO-220(TO-220-3)	20000	原装品质保证	询价
贸泽芯城（深圳）电子科技有限公司	2N6040G	ON/安森美	23+	TO-220AB	10860	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价

2N604芯片相关品牌

2N604规格书下载地址

2N604参数引脚图相关

2N604数据表相关新闻

2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-19
2N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-7
2N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-10
2N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-3
2N6043G
原装代理
2022-7-23
2N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5

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2N604晶体管资料

2N604价格

2N604产品属性

2N604供应商更多...

2N604芯片相关品牌

2N604规格书下载地址

2N604参数引脚图相关

2N604数据表相关新闻

2N6027RLRAG坚持只做原装货

2N60G-TO220FT-A-TG_UTC代理商

2N5401L-SOT89R-B-TG_UTC代理商

2N60L-TO220F1T-TG_UTC代理商

2N6043G

2N5245

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