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2N588晶体管资料

2N588(A)别名：2N588(A)三极管、2N588(A)晶体管、2N588(A)晶体三极管
2N588(A)生产厂家：CSR_美国电子晶体管公司_美国史普拉各电气公司
2N588(A)制作材料：Ge-PNP
2N588(A)性质：射频/高频放大（HF）
2N588(A)封装形式：直插封装
2N588(A)极限工作电压：15V
2N588(A)最大电流允许值：0.05A
2N588(A)最大工作频率：250MHZ
2N588(A)引脚数：3
2N588(A)最大耗散功率：
2N588(A)放大倍数：
2N588(A)图片代号：C-47
2N588(A)vtest：15
2N588(A)htest：250000000
2N588(A)atest：0.05
2N588(A)wtest：0

2N588(A)代换 2N588(A)用什么型号代替：AF106,AF109R,AF306,2N3323,2N3324,2N3325,3AG53D,

2N588价格

参考价格：￥20.9563

型号：2N5880 品牌：Centralr 备注：这里有2N588多少钱，2025年最近7天走势，今日出价，今日竞价，2N588批发/采购报价，2N588行情走势销售排行榜，2N588报价。

型号	功能描述	生产厂家企业	LOGO
2N5880	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	boca 博卡	boca
2N5880	POWER TRANSISTORS(15A,160W) General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	MOSPEC 统懋	MOSPEC
2N5880	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5880	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5880	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5881	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications	JMNIC 锦美电子	JMNIC
2N5881	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5881	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N5881	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5881	POWER TRANSISTORS(15A,160W) General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	MOSPEC 统懋	MOSPEC
2N5881	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5881	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	boca 博卡	boca
2N5882	Silicon NPN High-Power Transistor Silicon NPN High-Power Transistor . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — hFE = 20 (Min) @ IC = 6.0 Adc • Low Collector — Emitter Saturation Voltage — VCE(sat) = 1.0 V	ONSEMI 安森美半导体	ONSEMI
2N5882	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	boca 博卡	boca
2N5882	POWER TRANSISTORS(15A,160W) General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	MOSPEC 统懋	MOSPEC
2N5882	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5882	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5882	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N5882	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications	JMNIC 锦美电子	JMNIC
2N5882	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5883	POWER TRANSISTORS COMPLEMENTARY SILICON ... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5883	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 APPLICATIONS • They are intended for use in power linear and switching applications	JMNIC 锦美电子	JMNIC
2N5883	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications	SAVANTIC	SAVANTIC
2N5883	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications	ISC 无锡固电	ISC
2N5883	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5883	POWER TRANSISTORS(25A,200W) General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	MOSPEC 统懋	MOSPEC
2N5883	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	boca 博卡	boca
2N5883	Supply management DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications.	Central	Central
2N5883	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5883G	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5884	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	boca 博卡	boca
2N5884	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5884	POWER TRANSISTORS(25A,200W) General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	MOSPEC 统懋	MOSPEC
2N5884	Bipolar Transistor Description: High Power TO-3, PNP Transistor Features: • Low Collector Emitter Saturation Voltage : Vce(sat)1V Ic = 15A • High Current Gain-Bandwidth Product : ft = 4MHz (Min.) @ Ic = 1A • Low Leakage Current Icex = 1MA (Max.) at Rated Voltage • Excellent DC Current Gain hfe = 20 (Min.) @	MULTICOMP 易络盟	MULTICOMP
2N5884	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5884	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications	ISC 无锡固电	ISC
2N5884	isc Silicon PNP Power Transistor DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications	ISC 无锡固电	ISC
2N5884	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications	SAVANTIC	SAVANTIC
2N5884	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 APPLICATIONS • They are intended for use in power linear and switching applications	JMNIC 锦美电子	JMNIC
2N5884	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·DC Current Gain- : hFE= 20-100 @IC= -10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applicati	ISC 无锡固电	ISC
2N5884	POWER TRANSISTORS COMPLEMENTARY SILICON ... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5884	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2N5884G	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5885	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5885	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	boca 博卡	boca
2N5885	POWER TRANSISTORS(25A,200W) General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	MOSPEC 统懋	MOSPEC
2N5885	isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@IC= 10A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications.	ISC 无锡固电	ISC
2N5885	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5885	POWER TRANSISTORS COMPLEMENTARY SILICON ... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5885	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 APPLICATIONS ·They are intended for use in power linear and switching applications	JMNIC 锦美电子	JMNIC
2N5885	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications	SAVANTIC	SAVANTIC
2N5885G	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5886	Complementary Silicon High?뭁ower Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell	ONSEMI 安森美半导体	ONSEMI
2N5886	POWER TRANSISTORS(25A,200W) General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	MOSPEC 统懋	MOSPEC
2N5886	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A	boca 博卡	boca
2N5886	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5886	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain- : hFE= 20-100 @IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5886	isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@IC= 10A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications.	ISC 无锡固电	ISC
2N5886	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications	SAVANTIC	SAVANTIC
2N5886	POWER TRANSISTORS COMPLEMENTARY SILICON ... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

2N588产品属性

类型
描述
型号
2N588
功能描述
两极晶体管 - BJT 80V 15A PNP
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2N588供应商更多...

更新时间：2025-12-25 14:19:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	2N5884	ST/意法	22+	TO-3	20000	公司只有原装品质保证	询价
深圳市达恩科技有限公司	2N5884G	ONSemiconductor	24+	NA	3000	进口原装正品优势供应	询价
中天科工半导体（深圳）有限公司	2N5884	MOTOROLA/摩托罗拉	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市科达星科技有限公司	2N5884	ON Semicondu	24+	TO-3	37500	原装正品现货,价格有优势!	询价
深圳市威雅利发展有限公司	2N5884	ST/意法	20+	TO-3	14	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
上海鑫科润电子科技有限公司	2N5884	ONSemiconductor	2003	TO-3	25	原装现货海量库存欢迎咨询	询价
深圳市豪迈兴电子有限公司	2N5884G	ON	24+	N/A	8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市拓亿芯电子有限公司	2N5884	ST/意法	25+	TO-3	30000	代理全新原装现货,价格优势	询价
深圳市昊创电子有限公司	2N5884	MOTOROLA		CAN	1797	专营铁帽CANCDIP	询价
深圳市星辰微电科技有限公司	2N5883	ON	22+	TO-220-3	50000	ON二三极管全系列在售	询价

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2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5

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2N588晶体管资料

2N588价格

2N588产品属性

2N588供应商更多...

2N588芯片相关品牌

2N588规格书下载地址

2N588参数引脚图相关

2N588数据表相关新闻

2N6027RLRAG坚持只做原装货

2N5192G原包原标原装现货

2N60G-TO220FT-A-TG_UTC代理商

2N5401L-SOT89R-B-TG_UTC代理商

2N6043G

2N5245

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