NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product- : fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications.

SI NPN POWER BJT

Description: Si NPN Power BJT I(C) = 5 A to 9.9 A

1 AMPERE POWER TRANSISTORS PNP SILICON

文件：125.18 Kbytes Page：1 Pages

Bipolar PNP Device in a Hermetically sealed TO66

文件：16 Kbytes Page：1 Pages

Bipolar PNP Device in a Hermetically sealed TO66

文件：16.01 Kbytes Page：1 Pages

Bipolar Junction Transistors

Trans GP BJT NPN 80V 7A 3-Pin TO-59

包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

1 AMPERE POWER TRANSISTORS PNP SILICON

文件：125.18 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed TO66

文件：15.16 Kbytes Page：1 Pages

Bipolar Junction Transistors

封装/外壳：TO-210AA，TO-59-4，接线柱 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个