30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS

30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS 30 AMP NPN HIGH VOLTAGE/ HIGH ENERGY 200 VOLTS 30 AMP HIGH POWER NPN TRANSISTORS 200 AND 250 VOLTS

NPN POWER TRANSISTORS

GEOMETRY 511 ● IC to 30 Amp ● Fast Switching

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

PNP SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5333 is a PNP Silicon Power Transistor manufactured by the epitaxial planar process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MARKING: FULL PART NUMBER

P-N-P SILICON POWER TRANSISTOR

P-N-P SILICON POWER TRANSISTOR

SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 2A

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5334, 2N5335 types are Silicon NPN Transistors designed for high current, fast switching and amplifier applications.

Power Transistors

Power Transistors

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

Power Transistors

Power Transistors

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5334, 2N5335 types are Silicon NPN Transistors designed for high current, fast switching and amplifier applications.

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NPN SILICON TRANSISTOR

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

Power Transistors

Power Transistors

Power Transistors

Power Transistors

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NPN SILICON TRANSISTOR

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE

FEATURES • HERMETIC METAL PACKAGES • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS • FULLY ISOLATED APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

NPN SILICON TRANSISTOR

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

Power Transistors

Power Transistors

5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS

5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS

5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS

5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS

Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5339J) • JANTX level (2N5339JX) • JANTXV level (2N5339JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (

NPN Power Silicon Transistor

Features • JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560 • TO-39 (TO-205AD) Package

Power Transistors

Power Transistors

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

NPN POWER SILICON SWITCHING TRANSISTOR

NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

NPN SILICON TRANSISTOR

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION 2N5336 series types are silicon NPN epitaxial planar transistors in a hermetically sealed metal package designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.

Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5339J) • JANTX level (2N5339JX) • JANTXV level (2N5339JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (

Surface Mount U3 Package

Features • JANS and JANSR Qualified to MIL-PRF-19500/560 • JEDEC Registered 2N5154 • Lightweight & Low Power • Ideal for Space, Military, and Other High Reliability Applications • Surface Mount U3 Package

封装/外壳：TO-211MB，TO-63-4，接线柱 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：TRANS PNP 80V 2A TO5 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistors

Bipolar PNP Device

文件：11.95 Kbytes Page：1 Pages

Bipolar Junction Transistors

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件：11.09 Kbytes Page：1 Pages

Bipolar Junction Transistors

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件：11.95 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed TO39

文件：16.16 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed TO39

文件：16.149 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件：11.09 Kbytes Page：1 Pages

NPN SILICON TRANSISTORS

文件：27.16 Kbytes Page：2 Pages

NPN SILICON TRANSISTORS

文件：15.53 Kbytes Page：2 Pages

NPN SILICON TRANSISTORS

文件：27.16 Kbytes Page：2 Pages

Chip Type 2C5154 Geometry 9201 Polarity NPN

文件：33.57 Kbytes Page：1 Pages