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2N423晶体管资料

2N4231别名：2N4231三极管、2N4231晶体管、2N4231晶体三极管
2N4231生产厂家：美国、法国费兰第有限公司_美国摩托罗拉半导体公司_
2N4231制作材料：Si-NPN
2N4231性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2N4231封装形式：直插封装
2N4231极限工作电压：50V
2N4231最大电流允许值：3A
2N4231最大工作频率：>4MHZ
2N4231引脚数：2
2N4231最大耗散功率：35W
2N4231放大倍数：
2N4231图片代号：E-44
2N4231vtest：50
2N4231htest：4000100
2N4231atest：3
2N4231wtest：35

2N4231代换 2N4231用什么型号代替：BD241,BD243A,BD535,BD539A,BD597,BD607,2N3054,3DD30A,

2N423价格

参考价格：￥122.2893

型号：2N4233A 品牌：Semiconductors 备注：这里有2N423多少钱，2025年最近7天走势，今日出价，今日竞价，2N423批发/采购报价，2N423行情走势销售排行榜，2N423报价。

型号	功能描述	生产厂家企业	LOGO
2N4231	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N4231	Power Transistors Power Transistors TO-66 Case	Central	Central
2N4231	isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N4231A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4231A	POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	MOSPEC 统懋	MOSPEC
2N4231A	Power Transistors Power Transistors TO-66 Case	Central	Central
2N4231A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N4231A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4232	Power Transistors Power Transistors TO-66 Case	Central	Central
2N4232	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N4232A	isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N4232A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4232A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4232A	POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	MOSPEC 统懋	MOSPEC
2N4232A	Power Transistors Power Transistors TO-66 Case	Central	Central
2N4232A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N4232A	Bipolar NPN Device in a Hermetically sealed TO66 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A	SEME-LAB	SEME-LAB
2N4233	Power Transistors Power Transistors TO-66 Case	Central	Central
2N4233	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N4233A	MEDIUM-POWER SILICON TRANSISTOR COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4233A	isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N4233A	Power Transistors Power Transistors TO-66 Case	Central	Central
2N4233A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	boca 博卡	boca
2N4233A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4233A	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4234	NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4234	GENERAL PURPOSE TRANSISTOR (PNP SILICON) GENERAL PURPOSE TRANSISTOR PNP SILICON	boca 博卡	boca
2N4234	NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR Qualified per MIL-PRF-19500/580	Microsemi 美高森美	Microsemi
2N4234	Small Signal Transistors Small Signal Transistors	Central	Central
2N4234	COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2N4234	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N4234	Bipolar Transistor Description: This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Description Transistor,PNP,3A,4	MULTICOMP 易络盟	MULTICOMP
2N4235	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N4235	COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2N4235	Small Signal Transistors Small Signal Transistors	Central	Central
2N4235	NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR Qualified per MIL-PRF-19500/580	Microsemi 美高森美	Microsemi
2N4235	GENERAL PURPOSE TRANSISTOR (PNP SILICON) GENERAL PURPOSE TRANSISTOR PNP SILICON	boca 博卡	boca
2N4235	NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4236	Bipolar PNP Device in a Hermetically sealed TO39 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 3A	SEME-LAB	SEME-LAB
2N4236	SILICON PLANAR EPITAXIAL PNP TRANSISTOR SILICON PLANAR EPITAXIAL PNP TRANSISTOR • VCBO=80V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available	TTELEC	TTELEC
2N4236	NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR Qualified per MIL-PRF-19500/580	Microsemi 美高森美	Microsemi
2N4236	GENERAL PURPOSE TRANSISTOR (PNP SILICON) GENERAL PURPOSE TRANSISTOR PNP SILICON	boca 博卡	boca
2N4236	Small Signal Transistors Small Signal Transistors	Central	Central
2N4236	SI PNP POWER BJT NPN POWER AMPLIFIER SILICON TRANSISTOR	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4236	NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4236	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N4237	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N4237	NPN SWITCHING TRANSISTORS NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4237	COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2N4237	Small Signal Transistors Small Signal Transistors	Central	Central
2N4237	NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4237, 2N4238, and 2N4239 are silicon NPN transistors mounted in a hermetically sealed metal case, designed for power amplifier, power driver, and switching power supply applications. MARKING: FULL PART NUMBER	Central	Central
2N4237	NPN MEDIUM POWER SILICON TRANSISTOR NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581	Microsemi 美高森美	Microsemi
2N4237	GENERAL PURPOSE TRANSISTOR (NPN SILICON) GENERAL PURPOSE TRANSISTORS NPN SILICON	boca 博卡	boca
2N4237	SILICON PLANAR EPITAXIAL NPN TRANSISTOR Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 40V IC = 1A	SEME-LAB	SEME-LAB
2N4237	SI NPN LO-PWR BJT NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4237	5 WATT NPN POWER NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4238	5 WATT NPN POWER NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N4238	GENERAL PURPOSE TRANSISTOR (NPN SILICON) GENERAL PURPOSE TRANSISTORS NPN SILICON	boca 博卡	boca
2N4238	NPN MEDIUM POWER SILICON TRANSISTOR NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581	Microsemi 美高森美	Microsemi
2N4238	Small Signal Transistors Small Signal Transistors	Central	Central

2N423产品属性

类型
描述
型号
2N423
制造商
SEME-LAB
制造商全称
Seme LAB
功能描述
Bipolar NPN Device in a Hermetically sealed TO66

2N423供应商更多...

更新时间：2025-12-25 13:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿智腾科技有限公司	2N4237	MOT	24+	CAN3	6540	原装现货/欢迎来电咨询	询价
标准国际(香港)有限公司	2N4237	NSC	25+		43	公司优势库存热卖中!!	询价
深圳市弘为电子有限公司	2N4237	MOTOROLA	24+	CAN3	2500	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	2N4237L	MOTOROLA/摩托罗拉	23+	CAN3	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市得捷芯城科技有限公司	2N4237	ASI	24+	NA/	8700	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	2N4237L	MOTOROLA/摩托罗拉	专业铁帽	CAN3	67500	铁帽原装主营-可开原型号增税票	询价
现代芯城（深圳）科技有限公司	2N4237PBFREE		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市安富世纪电子有限公司	2N4237JANTXV	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市威尔健半导体有限公司	2N4237	ASI	23+	CAN3	50000	全新原装正品现货,支持订货	询价
深圳市昊创电子有限公司	2N4237S	MOTOROLA	专业铁帽	CAN3	2150	原装铁帽专营,代理渠道量大可订货	询价

2N423芯片相关品牌

2N423规格书下载地址

2N423参数引脚图相关

2N423数据表相关新闻

2N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-11
2N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-10
2N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
2N3906
2N3906，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
2N3904S-RTK/PS进口原装现货假一罚十
2N3904S-RTK/P S进口原装现货假一罚十
2019-8-6
2N3904S-RTK/PS，SOT-23，KEC原装正品现货
2N3904S-RTK/P S，SOT-23，KEC原装正品现货
2019-7-17

DdatasheetPDF页码索引

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2N423晶体管资料

2N423价格

2N423产品属性

2N423供应商更多...

2N423芯片相关品牌

2N423规格书下载地址

2N423参数引脚图相关

2N423数据表相关新闻

2N5192G原包原标原装现货

2N5401L-SOT89R-B-TG_UTC代理商

2N5245

2N3906

2N3904S-RTK/PS进口原装现货假一罚十

2N3904S-RTK/PS，SOT-23，KEC原装正品现货

DdatasheetPDF页码索引