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2N423晶体管资料
2N4231别名:2N4231三极管、2N4231晶体管、2N4231晶体三极管
2N4231生产厂家:美国、法国费兰第有限公司_美国摩托罗拉半导体公司_
2N4231制作材料:Si-NPN
2N4231性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2N4231封装形式:直插封装
2N4231极限工作电压:50V
2N4231最大电流允许值:3A
2N4231最大工作频率:>4MHZ
2N4231引脚数:2
2N4231最大耗散功率:35W
2N4231放大倍数:
2N4231图片代号:E-44
2N4231vtest:50
2N4231htest:4000100
- 2N4231atest:3
2N4231wtest:35
2N4231代换 2N4231用什么型号代替:BD241,BD243A,BD535,BD539A,BD597,BD607,2N3054,3DD30A,
2N423价格
参考价格:¥122.2893
型号:2N4233A 品牌:Semiconductors 备注:这里有2N423多少钱,2025年最近7天走势,今日出价,今日竞价,2N423批发/采购报价,2N423行情走势销售排行榜,2N423报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | |||
Power Transistors Power Transistors TO-66 Case | Central | |||
isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | MOSPEC 统懋 | |||
Power Transistors Power Transistors TO-66 Case | Central | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors TO-66 Case | Central | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | MOSPEC 统懋 | |||
Power Transistors Power Transistors TO-66 Case | Central | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | |||
Bipolar NPN Device in a Hermetically sealed TO66 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A | SEME-LAB | |||
Power Transistors Power Transistors TO-66 Case | Central | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
MEDIUM-POWER SILICON TRANSISTOR COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | |||
Power Transistors Power Transistors TO-66 Case | Central | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
GENERAL PURPOSE TRANSISTOR (PNP SILICON) GENERAL PURPOSE TRANSISTOR PNP SILICON | boca 博卡 | |||
NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR Qualified per MIL-PRF-19500/580 | Microsemi 美高森美 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | MICRO-ELECTRONICS | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Bipolar Transistor Description: This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Description Transistor,PNP,3A,4 | MULTICOMP 易络盟 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | MICRO-ELECTRONICS | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR Qualified per MIL-PRF-19500/580 | Microsemi 美高森美 | |||
GENERAL PURPOSE TRANSISTOR (PNP SILICON) GENERAL PURPOSE TRANSISTOR PNP SILICON | boca 博卡 | |||
NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Bipolar PNP Device in a Hermetically sealed TO39 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 3A | SEME-LAB | |||
SILICON PLANAR EPITAXIAL PNP TRANSISTOR SILICON PLANAR EPITAXIAL PNP TRANSISTOR • VCBO=80V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available | TTELEC | |||
NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR Qualified per MIL-PRF-19500/580 | Microsemi 美高森美 | |||
GENERAL PURPOSE TRANSISTOR (PNP SILICON) GENERAL PURPOSE TRANSISTOR PNP SILICON | boca 博卡 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
SI PNP POWER BJT NPN POWER AMPLIFIER SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN POWER AMPLIFIER SILICON TRANSISTOR NPN POWER AMPLIFIER SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPN SWITCHING TRANSISTORS NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | MICRO-ELECTRONICS | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4237, 2N4238, and 2N4239 are silicon NPN transistors mounted in a hermetically sealed metal case, designed for power amplifier, power driver, and switching power supply applications. MARKING: FULL PART NUMBER | Central | |||
NPN MEDIUM POWER SILICON TRANSISTOR NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581 | Microsemi 美高森美 | |||
GENERAL PURPOSE TRANSISTOR (NPN SILICON) GENERAL PURPOSE TRANSISTORS NPN SILICON | boca 博卡 | |||
SILICON PLANAR EPITAXIAL NPN TRANSISTOR Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 40V IC = 1A | SEME-LAB | |||
SI NPN LO-PWR BJT NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
5 WATT NPN POWER NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
5 WATT NPN POWER NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
GENERAL PURPOSE TRANSISTOR (NPN SILICON) GENERAL PURPOSE TRANSISTORS NPN SILICON | boca 博卡 | |||
NPN MEDIUM POWER SILICON TRANSISTOR NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581 | Microsemi 美高森美 | |||
Small Signal Transistors Small Signal Transistors | Central |
2N423产品属性
- 类型
描述
- 型号
2N423
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 40V 5A 3PIN TO-66 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CENTRAL |
1418+ |
CAN3 |
62 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MOTOROLA |
专业铁帽 |
CAN3 |
2150 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
|||
NSC |
25+ |
43 |
公司优势库存 热卖中!! |
||||
MOTOROLA |
24+ |
CAN3 |
2500 |
原装现货假一罚十 |
|||
MOTOROLA/摩托罗拉 |
23+ |
CAN3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ASI |
24+ |
NA/ |
8700 |
原装现货,当天可交货,原型号开票 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
2N423芯片相关品牌
2N423规格书下载地址
2N423参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N4250A
- 2N4250
- 2N424A
- 2N4249
- 2N4248
- 2N4246
- 2N4245
- 2N4244
- 2N4243
- 2N4242
- 2N4241(MP)
- 2N4240
- 2N424(A/I)
- 2N424
- 2N4239X
- 2N4239
- 2N4238
- 2N4237
- 2N4236
- 2N4235
- 2N4234
- 2N4233A
- 2N4233
- 2N4232A
- 2N4232
- 2N4231A
- 2N4231
- 2N4228
- 2N4227
- 2N4226
- 2N4225
- 2N4224
- 2N4223
- 2N4222A
- 2N4222
- 2N4221A
- 2N4221
- 2N4220A
- 2N4220
- 2N422(A)
- 2N422
- 2N4219
- 2N4218
- 2N4217
- 2N4216
- 2N4215
- 2N4214
- 2N4213
- 2N4212
- 2N4211
- 2N4210
- 2N421
- 2N4209
- 2N4208
- 2N4207
- 2N4204
- 2N4203
- 2N4202
2N423数据表相关新闻
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2019-7-17
DdatasheetPDF页码索引
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