Small Signal Transistors

Small Signal Transistors TO-39 Case

Small Signal Transistor PNP- Saturated Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 15,000Å

Type 2N3467 Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases.

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 40V IC = 1A

Type 2N3467L Geometry 6706 Polarity PNP

Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-5 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases.