NPN Silicon Low-Power 250V to 350V, 1A PIND Tested

This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsula

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON NPN TRANSISTORS

DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators

HIGH VOLTAGE AMPLIFIERS

HIGH VOLTAGE AMPLIFIERS

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Power Transistors

Power Transistors

HIGH VOLTAGE NPN TRANSISTORS

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