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2N3421晶体管资料
2N3421别名：2N3421三极管、2N3421晶体管、2N3421晶体三极管
2N3421生产厂家：美国硅晶体技术公司_美国得克萨斯仪表公司_美国晶体
2N3421制作材料：Si-NPN
2N3421性质：低频或音频放大 （LF）_开关管 （S）
2N3421封装形式：直插封装
2N3421极限工作电压：125V
2N3421最大电流允许值：5A
2N3421最大工作频率：<1MHZ或未知
2N3421引脚数：3
2N3421最大耗散功率：15W
2N3421放大倍数：β>40
2N3421图片代号：C-40
2N3421vtest：125
2N3421htest：999900
- 2N3421atest：5
2N3421wtest：15
2N3421代换 2N3421用什么型号代替：BFT34,BUX34,BUY80,2N4309,2N4895,2N4896,2N4897,3DK204C,
2N3421价格
参考价格：￥11.4969
型号：2N3421 品牌：Central Semiconductor Co 备注：这里有2N3421多少钱，2026年最近7天走势，今日出价，今日竞价，2N3421批发/采购报价，2N3421行情走势销售排行榜，2N3421报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N3421 | 3 Amp, 125V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 | MICROSEMI 美高森美 |   | |
2N3421 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) | CENTRAL | | |
2N3421 | NPN Medium Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393 • TO-5 & TO-39 (TO-205AD) Package | MA-COM | | |
2N3421 | NPN TO-39/TO-5 NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N3421 | Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-5 Bag This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ; | MICROCHIP 微芯科技 | | |
2N3421 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 文件：15.34 Kbytes Page：1 Pages | SEME-LAB | | |
2N3421 | 封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：TRANS NPN 80V 3A TO5 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | |
2N3421 | SILICON NPN TRANSISTORS 文件：508.56 Kbytes Page：2 Pages | CENTRAL | | |
2N3421 | NPN MEDUIM POWER SILICON TRANSISTOR 文件：50.23 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | |
NPN Silicon Power 60V to 80V, 3A This specification covers the performance requirements for NPN, silicon, 2N3418, 2N3419, 2N3420 and 2N3421 transistors for use in medium power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/393 a | MICROCHIP 微芯科技 | | ||
Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-39 This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ; | MICROCHIP 微芯科技 | | ||
NPN Medium Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393 • TO-5 & TO-39 (TO-205AD) Package | MA-COM | | ||
Bipolar NPN Device in a Hermetically sealed TO39 文件：15.34 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.67 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed 文件：15.41 Kbytes Page：1 Pages | SEME-LAB | | ||
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 文件：55.11 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 文件：55.11 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 文件：55.11 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
NPN MEDIUM POWER SILICON TRANSISTOR 文件：342 Kbytes Page：6 Pages | MICROSEMI 美高森美 | | ||
NPN MEDUIM POWER SILICON TRANSISTOR 文件：50.23 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 文件：55.11 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 文件：55.11 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 文件：55.11 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.66 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed 文件：15.42 Kbytes Page：1 Pages | SEME-LAB | |
2N3421产品属性
- 类型
描述
- 型号
2N3421
- 功能描述
两极晶体管 - BJT NPN Power SW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
2N3421 |
25+ |
14 |
14 |
||||
SSI |
25+ |
CAN6 |
220 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
原厂 |
2540+ |
CAN3 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
24+ |
CAN |
7000 |
|||||
SSI |
24+ |
CAN6 |
21574 |
郑重承诺只做原装进口现货 |
|||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
2N3421规格书下载地址
2N3421参数引脚图相关
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DdatasheetPDF页码索引
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