Transistor GP BJT NPN 3-Pin 60V 3A 1000mW TO-39

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

NPN MEDUIM POWER SILICON TRANSISTOR

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封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：TRANS NPN 60V 3A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

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NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes Page：2 Pages

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

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Bipolar NPN Device in a Hermetically sealed

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Bipolar NPN Device in a Hermetically sealed

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Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes Page：2 Pages

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes Page：2 Pages