Trans GP BJT PNP 60V 0.2A 3-Pin TO-39

SPRINGFIELD, NEW JERSEY 07081

The 2N3277 and 2N3278 are P channel PLANAE field effect transistors designed for use in high performance low-level circuit. Thes devices will find use where conversion to solid state circuit is desirable in cases that previously required vacuum tubes for high-impdeance and low-noise characteristic

SPRINGFIELD, NEW JERSEY 07081

The 2N3277 and 2N3278 are P channel PLANAE field effect transistors designed for use in high performance low-level circuit. Thes devices will find use where conversion to solid state circuit is desirable in cases that previously required vacuum tubes for high-impdeance and low-noise characteristic

SPRINGFIELD, NEW JERSEY 07081

The 2N3277 and 2N3278 are P channel PLANAE field effect transistors designed for use in high performance low-level circuit. Thes devices will find use where conversion to solid state circuit is desirable in cases that previously required vacuum tubes for high-impdeance and low-noise characteristic

GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR

GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTORS

Trans GP BJT PNP 60V 0.2A 3-Pin TO-39

Trans GP BJT PNP 60V 0.2A 3-Pin TO-39