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2N299晶体管资料

  • 2N299别名:2N299三极管、2N299晶体管、2N299晶体三极管

  • 2N299生产厂家:PHC

  • 2N299制作材料:Ge-PNP

  • 2N299性质:射频/高频放大 (HF)

  • 2N299封装形式:直插封装

  • 2N299极限工作电压:5V

  • 2N299最大电流允许值:0.005A

  • 2N299最大工作频率:110MHZ

  • 2N299引脚数:3

  • 2N299最大耗散功率:0.02W

  • 2N299放大倍数

  • 2N299图片代号:C-47

  • 2N299vtest:5

  • 2N299htest:110000000

  • 2N299atest:0.005

  • 2N299wtest:0.02

  • 2N299代换 2N299用什么型号代替:AF106,AF109R,AF124,AF125,AF200,2N3323,2N3324,2N3325,3AG53C,

型号 功能描述 生产厂家 企业 LOGO 操作

20 STERN AVE

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SWITCHING TRANSISTORS

NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The CENTRAL SEMICONDUCTOR 2N4391 series

文件:536.58 Kbytes Page:2 Pages

CENTRAL

封装/外壳:TO-205AA,TO-5-3 金属罐 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Trans GP BJT NPN 80V 1A 3-Pin TO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 100V 1A 3-Pin TO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-205AA,TO-5-3 金属罐 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Trans GP BJT NPN 80V 1A 3-Pin TO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO5 Metal Package

文件:11 Kbytes Page:1 Pages

SEME-LAB

2N299产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    5000mW

  • Maximum DC Collector Current:

    1A

  • Maximum Collector Emitter Voltage:

    100V

  • Maximum Collector Emitter Saturation Voltage:

    0.8@0.02mA@0.2mAV

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Microchip Technology / Atmel
25+
N/A
6843
样件支持,可原厂排单订货!
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
24+
CAN4
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
DUCOMMUN
2545+
SMD
4560
只做原装正品假一赔十为客户做到零风险!!
ST
25+
CAN to-39
20000
原装,请咨询
ST
23+
CAN to-39
16900
正规渠道,只有原装!
SP
24+
NO
2
DUCOMMUN
2023+
25
ST
26+
CAN to-39
60000
只有原装 可配单

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