EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.FEATURES\nLow Leakage Current\n: ICEX=50nA(Max.), IBL=50nA(Max.)\n          @VCE=30V, VEB=3V.\nExcellent DC Current Gain Linearity.\nLow Saturation Voltage\n  : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\nLow Collector Output Capacitance\n  : Cob=4pF(Ma Low Leakage Current\n: ICEX=50nA(Max.), IBL=50nA(Max.)\n          @VCE=30V, VEB=3V.\nExcellent DC Current Gain Linearity.\nLow Saturation Voltage\n  : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\nLow Collector Output Capacitance\n  : Cob=4pF(Max.) @VCB=5V.;

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

PNP SILICON PLANAR TRANSISTORS

PNP Silicon Planar Transistors

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

GENERAL PURPOSE PNP TRANSISTOR

文件：18.44 Kbytes Page：2 Pages