NPN SILICON DUAL TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2903, A types are silicon NPN dual transistor manufactured by the epitaxial planar process utilizing 2 individual chips mounted in hermetically sealed metal case designed for differential amplifier applications.

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DUAL SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

BJT

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Dual NPN silicon transistors designed for differential amplifier applications.

NPN SILICON DUAL TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2903, A types are silicon NPN dual transistor manufactured by the epitaxial planar process utilizing 2 individual chips mounted in hermetically sealed metal case designed for differential amplifier applications.

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)