位置:首页 > IC中文资料 > 2N289

2N289晶体管资料

  • 2N2890别名:2N2890三极管、2N2890晶体管、2N2890晶体三极管

  • 2N2890生产厂家:美国国民半导体公司_法国巴黎珊斯公司_美国晶体管有

  • 2N2890制作材料:Si-NPN

  • 2N2890性质:低频或音频放大 (LF)_开关管 (S)

  • 2N2890封装形式:直插封装

  • 2N2890极限工作电压:100V

  • 2N2890最大电流允许值:2A

  • 2N2890最大工作频率:>30MHZ

  • 2N2890引脚数:3

  • 2N2890最大耗散功率:0.8W

  • 2N2890放大倍数:β>30

  • 2N2890图片代号:C-40

  • 2N2890vtest:100

  • 2N2890htest:30000100

  • 2N2890atest:2

  • 2N2890wtest:0.8

  • 2N2890代换 2N2890用什么型号代替:BSS15,BSS42,BSW39,BSW66,BSX64,2N4239,2N5320,2SC696(A),2SC2214,3DK204B,

型号 功能描述 生产厂家 企业 LOGO 操作

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

20 STERN AVE

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI PNP LO-PWR BJT

SILICON PLANAR NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

SILICON NPN TRANSISTOR

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 80V IC = 2A

TTELEC

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH SPEED PNP SILICON PLANAR EPITAXIAL

DESCRIPTION The 2N2894, and 2N3209 are silicon planarepitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

CENTRAL

CASE 22-03, STYLE 1 TO-18(TO-206AA)

SWITCHING TRANSISTOR PNP SILICON

MOTOROLA

摩托罗拉

HIGH-SPEED SATURATED SWITCHES

HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS.

COMSET

HIGH-SPEED SATURATED SWITCHES

DESCRIPTION The 2N2894, and 2N3209 are silicon planarepitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA.

STMICROELECTRONICS

意法半导体

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

CENTRAL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

SI NPN LO-PWR BJT

Description: Si NPN Lo-Pwr BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

Trans GP BJT NPN 80V 2A 3-Pin TO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO39

文件:15.34 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 80V 2A 3-Pin TO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar Junction Transistors

TTELEC

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件:11.1 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO5

文件:15.25 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed

文件:14.65 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed

文件:15.41 Kbytes Page:1 Pages

SEME-LAB

PNP SILICON TRANSISTOR

文件:20.95 Kbytes Page:2 Pages

SEME-LAB

PNP SILICON TRANSISTOR

文件:15.61 Kbytes Page:2 Pages

SEME-LAB

HIGH-SPEED SATURATED SWITCHES

文件:78.51 Kbytes Page:3 Pages

COMSET

PNP SILICON TRANSISTOR

文件:20.95 Kbytes Page:2 Pages

SEME-LAB

HIGH-SPEED SATURATED SWITCHES

文件:78.51 Kbytes Page:3 Pages

COMSET

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

文件:371.72 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

文件:10.36 Kbytes Page:1 Pages

SEME-LAB

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR

文件:283.07 Kbytes Page:4 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:40.88 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:15 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:40.88 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER

文件:41.67 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, PNP

文件:22.34 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:16.059 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, PNP

文件:22.34 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件:21.92 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件:16.53 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件:21.92 Kbytes Page:2 Pages

SEME-LAB

包装:散装 描述:PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package

文件:10.36 Kbytes Page:1 Pages

SEME-LAB

SILICON NPN TRANSISTORS

文件:777.33 Kbytes Page:3 Pages

CENTRAL

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON NPN TRANSISTORS

文件:777.33 Kbytes Page:3 Pages

CENTRAL

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON NPN TRANSISTORS

文件:777.33 Kbytes Page:3 Pages

CENTRAL

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:散装 描述:TRANS NPN 90V 1A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

NPN SILICON TRANSISTOR

文件:22.29 Kbytes Page:2 Pages

SEME-LAB

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件:231.14 Kbytes Page:3 Pages

TTELEC

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON NPN TRANSISTORS

文件:777.33 Kbytes Page:3 Pages

CENTRAL

2N289产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    5000mW

  • Maximum DC Collector Current:

    2A

  • Maximum Collector Emitter Voltage:

    80V

  • Maximum Collector Emitter Saturation Voltage:

    0.75@0.2mA@1mAV

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-7-22 22:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
25+
CAN
66880
原装正品,欢迎询价
Microchip Technology / Atmel
25+
TO-18
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
CENTRALSEMI
24+/25+
6445
原装正品现货库存价优
原厂
2540+
CAN3
6852
只做原装正品假一赔十为客户做到零风险!!
MOTOROLA/摩托罗拉
25+
CAN3
880000
明嘉莱只做原装正品现货
MOT
25+
CAN3
26200
原装现货,诚信经营!
24+
CAN
7000
MOTOROLA
07+
CAN-3
9849
全新 发货1-2天
MOTOROLA
专业铁帽
CAN3
3850
原装铁帽专营,代理渠道量大可订货

2N289数据表相关新闻