NPN general purpose transistor

FEATURES • Low current (max. 50 mA) • Low voltage (max. 60 V) APPLICATIONS • General purpose switching and amplification • High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz. DESCRIPTION NPN transistor in a

Chip Type 2C2484 Geometry 0307 Polarity NPN

Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities

NPN SILICON PLANAR TRANSISTOR

This transistors is primarily intended for use in high performance, low level, low noise amplifier applications

SMALL SIGNAL BIPOLAR NPN SILICON

Features • Meets MIL 19500 /376 • Collector - Base Voltage 60 V • Collector - Current 50 mA • High Speed, Low Power Bipolar Transistor

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS.

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments and Agencies of the Department of Defense. SCOPE Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance is provided for each device type as specified in MIL-

Type 2N2484 Geometry 0220 / 0307 Polarity NPN

Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities

NPN SILICON PLANAR TRANSISTOR

NPN SILICON PLANAR TRANSISTOR This transistors is primarily intended for use in high performance, low level, low noise amplifier applications

NPN general purpose transistor

DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. FEATURES • Low current (max. 50 mA) • Low voltage (max. 60V) APPLICATIONS • General purpose switching and amplification • High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to

NPN - Low Noise Amplifier Transistor Chip

Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip

封装/外壳：TO-18-2 金属罐 包装：管件 描述：TRANS NPN 60V 0.05A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：散装 描述：TRANS NPN 60V 0.05A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PLANAR EPITAXIAL TRANSISTORS

文件：78.85 Kbytes Page：3 Pages

NPN SILICON AMPLIFIER TRANSISTOR

文件：43.62 Kbytes Page：3 Pages

NPN SILICON LOW POWER TRANSISTOR

文件：56.57 Kbytes Page：2 Pages

Silicon NPN Transistor

文件：215.11 Kbytes Page：2 Pages

Hi-Rel NPN bipolar transistor 60 V - 50 mA

Description The 2N2484HR is a silicon planar epitaxial NPN transistor specifically designed for aerospace HiRel applications and housed in hermetic packages. It complies with the ESCC 5000 qualification standard. It is ESCC qualified according to the 5201-001 specification. In case of conflict be

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments and Agencies of the Department of Defense. SCOPE Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance is provided for each device type as specified in MIL-

NPN SILICON LOW POWER TRANSISTOR

NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 * Available to JANS quality level only.

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments and Agencies of the Department of Defense. SCOPE Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance is provided for each device type as specified in MIL-

Silicon NPN Transistor

Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2484UBJ) • JANTX level (2N2484UBJX) • JANTXV level (2N2484UBJV) • JANS level (2N2484UBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 meth

NPN SILICON LOW POWER TRANSISTOR

NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 * Available to JANS quality level only.

NPN SILICON LOW POWER TRANSISTOR

NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 * Available to JANS quality level only.

Silicon NPN Transistor

文件：215.11 Kbytes Page：2 Pages

NPN SILICON LOW POWER TRANSISTOR

文件：56.57 Kbytes Page：2 Pages

SILICON PLANAR EPITAXIAL TRANSISTORS

文件：78.85 Kbytes Page：3 Pages

NPN SILICON TRANSISTOR

文件：530.35 Kbytes Page：2 Pages

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.85 Kbytes Page：1 Pages

HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件：20.06 Kbytes Page：2 Pages

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.04 Kbytes Page：1 Pages

NPN SILICON LOW POWER TRANSISTOR

文件：51.42 Kbytes Page：2 Pages

NPN SILICON LOW POWER TRANSISTOR

文件：51.42 Kbytes Page：2 Pages

NPN SILICON LOW POWER TRANSISTOR

文件：51.42 Kbytes Page：2 Pages