Hi-Rel 40 V - 0.8 A NPN transistor

Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for

抗辐照NPN双极性晶体管40 V、0.8 A

The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancie • Hermetic packages \n• ESCC and JANS qualified \n• Up to 100 krad(Si) low dose rate;

NPN switching transistors

FEATURES 1. High current (max. 800 mA) 2. Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package.PNP complement: 2N2907A.

Amplifier Transistors

Amplifier Transistors NPN Silicon

Amplifier Transistors

Amplifier Transistors NPN Silicon

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*