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2N219晶体管资料

  • 2N219别名:2N219三极管、2N219晶体管、2N219晶体三极管

  • 2N219生产厂家:CSR_美国电子晶体管公司

  • 2N219制作材料:Ge-PNP

  • 2N219性质:射频/高频放大 (HF)_开关管 (S)

  • 2N219封装形式:直插封装

  • 2N219极限工作电压:16V

  • 2N219最大电流允许值:0.015A

  • 2N219最大工作频率:13MHZ

  • 2N219引脚数:3

  • 2N219最大耗散功率:0.08W

  • 2N219放大倍数

  • 2N219图片代号:C-18

  • 2N219vtest:16

  • 2N219htest:13000000

  • 2N219atest:0.015

  • 2N219wtest:0.08

  • 2N219代换 2N219用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG53A,

型号 功能描述 生产厂家 企业 LOGO 操作
2N219

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS

FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS ● High Breakdown Voltage Combined With Very-Low Saturation Voltage ● DC Beta - Guaranteed From 100 μa to 1 amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications.

MICRO-ELECTRONICS

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS

FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS ● High Breakdown Voltage Combined With Very-Low Saturation Voltage ● DC Beta - Guaranteed From 100 μa to 1 amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS

FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS ● High Breakdown Voltage Combined With Very-Low Saturation Voltage ● DC Beta - Guaranteed From 100 μa to 1 amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS

FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS ● High Breakdown Voltage Combined With Very-Low Saturation Voltage ● DC Beta - Guaranteed From 100 μa to 1 amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS

FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS ● High Breakdown Voltage Combined With Very-Low Saturation Voltage ● DC Beta - Guaranteed From 100 μa to 1 amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-SPEED NPN SILICON, HIGH-CURRENT SWITCHING TRANSISTORS

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode TP-39

Diode TP-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

SI NPN POWER BJT , I(C) = A TO 2.4 A

Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Quality Semi-Conductors

Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Quality Semi-Conductors

Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.(40V, 1A)

文件:14.54 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 40V 1A 3-Pin TO-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.

文件:16.16 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 40V 1A 3-Pin TO-39

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar Junction Transistors

TTELEC

Bipolar NPN Device in a Hermetically sealed TO5

文件:15.25 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.

文件:11.09 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO39

文件:15.33 Kbytes Page:1 Pages

SEME-LAB

Transistors NPN silicium Planar epitaxiaux

文件:80.71 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Transistors NPN silicium Planar epitaxiaux

文件:80.71 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N219产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    50(Typ)MHz

  • Maximum Power Dissipation:

    800mW

  • Maximum DC Collector Current:

    1A

  • Maximum Collector Emitter Voltage:

    40V

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
24+
CAN3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
FSC
23+
NA
1159
专做原装正品,假一罚百!
原厂
2540+
CAN3
6852
只做原装正品假一赔十为客户做到零风险!!
ST
25+
to-126
20000
原装,请咨询
ST
23+
to-126
16900
正规渠道,只有原装!
W
24+
27
N/A
2402+
CAN-3
8324
原装正品!实单价优!
ST
23+
TO-59
8510
原装正品代理渠道价格优势

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