| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N2160 | UNIJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
2N2160 | Trans GP BJT NPN 100V 2A 4-Pin TO-111 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
2N2160产品属性
- 类型
描述
- Maximum Power Dissipation：
30000mW
- Maximum Operating Temperature：
200°C
- Maximum Emitter Base Voltage：
8V
- Maximum DC Collector Current：
2A
- Maximum Collector Emitter Voltage：
100V
- Maximum Collector Emitter Saturation Voltage：
1@0.1A@1AV
- Maximum Collector Base Voltage：
150V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
更新时间：2026-8-3 16:07:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
00+ |
CAN |
670 |
全新 发货1-2天 |
|||
S |
23+ |
CAN3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MOTOROLA/摩托罗拉 |
23+ |
CAN |
50000 |
全新原装正品现货,支持订货 |
|||
MOTOROLA/摩托罗拉 |
25+ |
N/A |
20000 |
只做原装,只有原装。 |
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2N2160规格书下载地址
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2N2160数据表相关新闻
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2MBI150VH-170-50，当天发货0755-82732291全新原装现货或门市自取.
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2019-4-16
DdatasheetPDF页码索引
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