EPITAXIAL PLANAR NPN

DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. ■ GENERAL PURPOSE AMPLIFIER AND SWITCH

AMPLIFIER TRANSISTOR NPN SILICON

AMPLIFIER TRANSISTOR NPN SILICON

COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2102, A types are PNP Silicon Transistors designed for high current general purpose amplifier applications, where low leakage and low VCE(SAT) is required. Higher hFE versions are also available on special order.

MEDIUM POWER AMPLIFIER & SWITCH

MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS.

Diode TP-39

Diode TP-39

NPN SILICON PLANAR TRANSISTOR

NPN SILICON PLANAR TRANSISTOR Amplifier Transistor

SI NPN POWER BJT, I(C) = 1A TO 2.4 A

Power Transistors

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 65V 1A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：TRANS PNP 65V 1A TO5 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box

Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Transistor

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

Bipolar NPN Device in a Hermetically sealed TO39

文件：16.16 Kbytes Page：1 Pages

SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued)

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2102, A types are PNP Silicon Transistors designed for high current general purpose amplifier applications, where low leakage and low VCE(SAT) is required. Higher hFE versions are also available on special order.

Small Signal Transistors

Small Signal Transistors

Diode TP-39

Diode TP-39

Small Signal Transistors

Small Signal Transistors

N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS

FOR MEDIUM-POWER, HIGH-SPEED SWITCHING AND AMPLIFIER APPLICATIONS ● High Breakdown Voltage Combined With Very-Low Saturation Voltage ● DC Beta - Guaranteed From 100 μa to 1 amp