型号 功能描述 生产厂家 企业 LOGO 操作
2ED2734S01G

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

Infineon

英飞凌

2ED2734S01G

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

Infineon

英飞凌

2ED2734S01G

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

Infineon

英飞凌

2ED2734S01G

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

Infineon

英飞凌

2ED2734S01G

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

Infineon

英飞凌

2ED2734S01G

160 V half bridge SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Integrated shoot-through protection with built-in dead time  Integrated sho

Infineon

英飞凌

2ED2734S01G

160 V half bridge SOI gate driver with integrated bootstrap diode

Features • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated low RON, ultra-fast bootstrap diodes • Independent under voltage lockout for both high and low side • Integrated shoot-through protection with built-in dead time • Integrated sho

Infineon

英飞凌

2ED2734S01G

160 V half bridge SOI gate driver with integrated bootstrap diode

Features • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated low RON, ultra-fast bootstrap diodes • Independent under voltage lockout for both high and low side • Integrated shoot-through protection with built-in dead time • Integrated sho

Infineon

英飞凌

160 V high side, low side SOI gate driver with integrated bootstrap diode

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated low RON, ultra-fast bootstrap diodes  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  Integrated short pulse / noise reje

Infineon

英飞凌

更新时间:2026-1-5 22:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
1700V两单元驱动板
12000
全新原装假一赔十
Infineon/英飞凌
24+
DSO-8
30000
原装正品公司现货,假一赔十!
Infineon/英飞凌
24+
DSO-8
8000
只做原装,欢迎询价,量大价优
Infineon Technologies
25+
-
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
英飞林
模块
1520
全新原装正品 数量多可订货 一级代理优势
EUPEC
25+
DIP-28
18000
原厂直接发货进口原装
Infineon/英飞凌
23+
DSO-8
12700
买原装认准中赛美
Infineon/英飞凌
21+
DSO-8
6820
只做原装,质量保证
INFINE0N
21+
AG-EICE-45
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
Infineon
23+
PG-VSON-10
15500
英飞凌优势渠道全系列在售

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