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型号 功能描述 生产厂家 企业 LOGO 操作
29F1610

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

29F1610

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION\nThe MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.FEA • 5V ±10% write and erase\n• JEDEC-standard EEPROM commands\n• Endurance:100,000 cycles\n• Fast access time: 90/100/120ns\n• Sector erase architecture\n- 16 equal sectors of 128k bytes each\n- Sector erase time: 1.3 s typical\n• Auto Erase and Auto Program Algorithms\n- Automatically erases any ;

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

MCNIX

????????????旺宏电子

29F1610产品属性

  • 类型

    描述

  • 型号

    29F1610

  • 制造商

    MCNIX

  • 制造商全称

    Macronix International

  • 功能描述

    16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

更新时间:2026-8-2 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MX
23+
SMD
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MX
2447
SOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MXIC
22+
SOP
20000
公司只有原装 品质保证
N/A
25+
NA
6
全新原装正品支持含税
2602+
SOP
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
MX
25+
SOP44W
3629
原装优势!房间现货!欢迎来电!
MX
2023+
SOP
50000
原装现货
N/A
23+
19
6500
专注配单,只做原装进口现货

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