4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

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4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

GENERAL DESCRIPTION The Am29F040B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F040B is offered in 32-pin PLC

4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

GENERAL DESCRIPTION The Am29F040B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F040B is offered in 32-pin PLC

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1