64K - BIT CMOS E2PROM

DESCRIPTION The CAT28C64A/CAT28C64AI is a fast, low power, 5V-only CMOS E3PROM organized as 8K x 8 bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle eliminate additional timing and protection hardware.

64K - BIT CMOS E2PROM

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages