RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF LDMOS Wideband Integrated Power Amplifier

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP TRIMMER 0.6-4.5PF 500V SMD 电容器 微调器，可变电容器

可调电容

RF LDMOS Wideband Integrated Power Amplifiers

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